Abstract:Cubic boron arsenide (BAs) is a promising compound semiconductor for thermal management applications due to its high thermal conductivity, exceeding 1000 W m(-1) K-1 at room temperature in high-quality samples. However, the as-grown BAs crystals usually exhibit large variations in thermal and electronic transport properties. The origin of these large variations has thus far been inconclusive. Here, we investigate the effects of impurities on the thermal and electrical properties of BAs. Time-of-flight secondary ion mass spectrometry and electron probe microanalysis measurements reveal the presence of several impurities in BAs, including Si, C, O, H, Te, Na, and I. Some of these impurities, especially Si, C, and H, could serve as shallow acceptors, leading to the p-type conducting behavior commonly measured in BAs. The thermal conductivity and hole mobility are reduced more in the samples with higher impurity concentrations due to the enhanced impurity scattering of phonons and holes, respectively. Firstprinciples calculations are used to determine the thermal conductivity reduction induced by different impurities. The calculated results confirm the experimental trends. The substitution of O for As leads to a large bond distortion resulting from the breaking of the Td symmetry, which yields unusually strong phonon scattering with a correspondingly large reduction in thermal conductivity. Our results offer useful insights into the impurity-sensitive transport properties of BAs.

Optical Properties of Cubic Boron Arsenide

Basic Physical Properties of Cubic Boron Arsenide

Mechanical Properties of Boron Arsenide Single Crystal

Ultrahigh Thermal Conductivity of Cubic Boron Arsenide with an Unexpectedly Strong Temperature Dependence

Thermal Expansion Coefficient and Lattice Anharmonicity of Cubic Boron Arsenide

Finite temperature optoelectronic properties of BAs from first principles

High thermal conductivity in cubic boron arsenide crystals

Direct and indirect optical absorptions of cubic BAs and BSb

One-particle and excitonic band structure in cubic Boron Arsenide

Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Band structure and carrier effective masses of boron arsenide: effects of quasiparticle and spin-orbit coupling corrections

The electronic band structure and optical properties of boron arsenide

Cubic boron arsenide under pressure

Unusual High Thermal Conductivity in Boron Arsenide Bulk Crystals

Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent

High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

Experimental observation of high thermal conductivity in boron arsenide

Photoluminescence mapping and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide

Simultaneously High Electron and Hole Mobilities in Cubic Boron-V Compounds: BP, BAs, and BSb

High thermal conductivity driven by the unusual phonon relaxation time platform in 2D monolayer boron arsenide

Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility