Abstract:We compute the electronic band structure and optical properties of boron arsenide using the relativistic quasiparticle self-consistent $GW$ approach, including electron-hole interactions through solution of the Bethe-Salpeter equation. We also calculate its electronic and optical properties using standard and hybrid density functional theory. We demonstrate that the inclusion of self-consistency and vertex corrections provides substantial improvement in the calculated band features, in particular when comparing our results to previous calculations using the single-shot $GW$ approach and various DFT methods, from which a considerable scatter in the calculated indirect and direct band gaps has been observed. We find that BAs has an indirect gap of 1.674 eV and a direct gap of 3.990 eV, consistent with experiment and other comparable computational studies. Hybrid DFT reproduces the indirect gap well, but provides less accurate values for other band features, including spin-orbit splittings. Our computed Born effective charges and dielectric constants confirm the unusually covalent bonding characteristics of this III-V system.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the accurate calculation and understanding of the electronic band structure and optical properties of boron arsenide (BAs). Specifically, the researchers used the relativistic quasiparticle self - consistent GW approach and considered electron - hole interactions by solving the Bethe - Salpeter equation (BSE) to improve the calculation accuracy. In addition, they also carried out calculations using standard density functional theory (DFT) and hybrid density functional theory to compare the effects of different methods. The main objectives of the paper include: 1. **Improve the calculation method**: By introducing self - consistency and vertex corrections, significantly improve the calculated band characteristics, especially compared with the results of previous single - shot GW methods and various DFT methods. 2. **Determine the energy gap value**: Calculate the indirect energy gap (1.674 eV) and direct energy gap (3.990 eV) of BAs and compare them with the results of experiments and other computational studies. 3. **Analyze material properties**: Calculate the Born effective charge and dielectric constant of BAs and confirm its unique covalent bonding characteristics. 4. **Evaluate the accuracy of different methods**: By comparing the calculation results at different theoretical levels, evaluate the accuracy of each method in predicting the electronic and optical properties of BAs. In summary, this paper aims to provide a more accurate understanding of the electronic structure and optical properties of BAs through advanced calculation methods, thereby providing theoretical support for potential device applications.

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