Electronic properties of selenium-tellurium melts

J.C Perron
DOI: https://doi.org/10.1016/0022-3093(72)90147-0
1972-06-01
Abstract:The electronic transport phenomena of SeTe melts are analyzed with two models of density of states. At low temperatures (T T∗ ) a metallic conduction, with a short mean free path occurs so that a pseudogap and onset of localization near the Fermi level are likely when the Mott's criterion is satisfied. The observation of switching phenomena in liquid Se-rich alloys strengthens the analogy with amorphous semiconductors.
materials science, multidisciplinary, ceramics
What problem does this paper attempt to address?