Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

Xin Gan,Yueying Zhang,Yupeng Hui,Shaoxuan Liu,Lei Wang,Jincheng Zhang,Yue Hao,Haijiao Harsan Ma

DOI: https://doi.org/10.1002/aisy.202200020

IF: 7.298

2022-04-08

Advanced Intelligent Systems

Abstract:Controllable memristance in point‐contacted metal–oxides heterojunctions is demonstrated by Haijiao Harsan Ma and coworkers. A robust negative differential resistance is observed which could be used to fabricate advanced electronic devices such as negative‐capacitance field‐effect transistors and terahertz devices. The dominant resistive switching mechanisms are demonstrated to be oxygen vacancies electromigration and electron hopping.Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111) heterojunctions is reported, in which a Schottky barrier is formed at the metal/oxides interface, and 2d electron gas is formed at the interface of perovskite oxides. A negative differential resistance is observed in the RESET process. The result shows that the observed resistive switching is strongly associated with oxygen‐vacancies (OVs) in oxides with dominating contributions from electron hopping between OV trap sites, and can be controlled by oxygen annealing and electron injection. Remarkably, a method is developed by continuous RESET processes to increase the high resistance state by 1–3 orders of magnitude, with an on/off ratio enhanced from ≈10 to ≈104. The work provides a promising pathway to understand conduction mechanism of oxides memristors and promote its application in RRAM and in‐memory computing.

English Else