Piezoelectric properties of LiM-doped (M = V, Nb, Ta, or Zr) AlN thin films

Tomohiro Terada,Junichi Kimura,Tamotsu Sasaki,Yuji Umeda,Yukari Inoue
DOI: https://doi.org/10.35848/1347-4065/ac124f
IF: 1.5
2021-07-27
Japanese Journal of Applied Physics
Abstract:Characterization of LiM-doped (M = V, Nb, Ta, or Zr) piezoelectric aluminum nitride ((Li y M 1− y )x Al 1− x N) was performed by first-principles calculations and experimental approaches. Thecalculation results show that for all (Li y M 1− y ) x Al 1− x N, piezoelectric coefficient d 33, fis increased by increasing the LiM doping concentration x up to 0.25. In comparison to thecalculation results, the experimental results reveal that only (Li y Nb 1− y ) x Al 1− x N hasincreased piezoelectric coefficient d 33 . The absolute value of d 33 was 9.54 pC N −1 at x = 0.15((Li 0.45 Nb 0.55 ) 0.15 Al 0.85 N) due to elastic softening of the elastic modulus E
physics, applied
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