Abstract:Wide-bandgap semiconductors exhibit much larger energy bandgaps than traditional semiconductors such as silicon, rendering them very promising to be applied in the fields of electronics and optoelectronics. Prominent examples of semiconductors include SiC, GaN, ZnO, and diamond, which exhibit distinctive characteristics such as elevated mobility and thermal conductivity. These characteristics facilitate the operation of a wide range of devices, including energy-efficient bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), as well as high-frequency high-electron-mobility transistors (HEMTs) and optoelectronic components such as light-emitting diodes (LEDs) and lasers. These semiconductors are used in building integrated circuits (ICs) to facilitate the operation of power electronics, computer devices, RF systems, and other optoelectronic advancements. These breakthroughs include various applications such as imaging, optical communication, and sensing. Among them, the field of power electronics has witnessed tremendous progress in recent years with the development of wide bandgap (WBG) semiconductor devices , which is capable of switching large currents and voltages rapidly with low losses. However, it has been proven challenging to integrat e these devices with silicon complementary metal oxide semiconductor (CMOS) logic circuits required for complex control functions . The monolithic integration of silicon CMOS with WBG devices increases the complexity of fabricating monolithically integrated smart integrated circuits (ICs). This review article proposes implementing CMOS logic directly on the WBG platform as a solution. However, achieving the CMOS functionalities with the adoption of WBG materials still remains a significant hurdle. This article summarizes the research progress in the fabrication of integrated circuits adopting various WBG materials ranging from SiC to diamond, with the goal of building future smart power ICs.

Gallium nitride-based complementary logic integrated circuits

Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters

Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

GaN Monolithic Digital Units on P-GaN Platform

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

Monolithic Logic Units based on DCFL Structure on p-GaN platform for GaN ICs.

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Numerical Investigation of Diamond Complementary Logic Integrated Circuits

III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Enhancement-Mode GaN P-Channel MOSFETs for Power Integration

Integrated complementary inverters and ring oscillators based on vertical-channel dual-base organic thin-film transistors

Wide bandgap semiconductor-based integrated circuits

Complementary Logic with Voltage Zero‐Loss and Nano‐Watt Power Via Configurable MoS2/WSe2 Gate

(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

A Sequential Logic Device Realized by Integration of In-Plane Gate Transistors in InGaAs∕InP

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

Monolithic DFF-NAND and DFF-NOR Logic Circuits Based on GaN MIS-HEMT

High-Performance Logic Circuits Constructed On Single Cds Nanowires

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

GaN Power Integration Technology and Its Future Prospects

Gallium nitride phononic integrated circuits for future RF front-ends