Abstract:Gallium nitride (GaN) power device is well known as a favorable alternative of silicon power device for the power management system. However, it is difficult to meet the demand of higher operating frequency when using the traditional high-voltage gate driver IC (HVIC) to control the GaN devices. In this article, we illustrated that the propagation delay of the high-voltage level-shifter structure is the primary factor in limiting the operating frequency of the HVIC, and a new high-voltage level-shifter structure named common-mode dual-interlock (CMDI) level-shifter structure is proposed, which can eliminate both the common-mode transient noise and differential-mode transient noise effectively without adopting resistance–capacitance noise filter. A better tradeoff between the dVS/dt noise immunity capability and the propagation delay can be achieved, which is verified by the numerous theoretical analysis and experimental results. Due to all, the GaN integration technology is not suitable for complicated circuits at present, a 600 V HVIC for GaN device adopting the proposed CMDI level-shifter structure is implemented with normal silicon-based bipolar-CMOS– double-diffused MOSFET (DMOS) technology finally. The experimental results show that it can achieve high dVS/dt noise immunity larger than 100 V/ns, low propagation delay less than 32 ns, and the allowable negative VS swing to –4 V at 5 V supply voltage.

Monolithic Logic Units based on DCFL Structure on p-GaN platform for GaN ICs.

GaN Monolithic Digital Units on P-GaN Platform

Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters

Monolithic DFF-NAND and DFF-NOR Logic Circuits Based on GaN MIS-HEMT

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

Monolithic Heterogeneous Integration of Si(100)/GaN CMOS Inverters and Normally-Off GaN Power Devices for High Switching Frequency and High Power Applications

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Development of GaN Monolithic Integrated Circuits for Power Conversion

GaN Power IC Technology on P-Gan Gate HEMT Platform

Gallium nitride-based complementary logic integrated circuits

III-V/Ge CMOS Device Technologies for High Performance Logic Applications

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

Enhancement-Mode GaN P-Channel MOSFETs for Power Integration

Dynamic Performance Analysis of Logic Gates Based on p -GaN/AlGaN/GaN HEMTs at High Temperature

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices