Simulation, Fabrication and Characterization of a Tunable Bragg Reflector Based on Silicon Oxide and Silicon Nitride Dielectric Films Deposited by PECVD

G. S. Martins,H. Baez,M. I. Alayo
DOI: https://doi.org/10.1149/1.2766922
2007-09-21
ECS Transactions
Abstract:of a Tunable Bragg Reflector based on dielectric silicon oxide and silicon nitride films deposited over corning-glass substrates by Plasma Enhanced Chemical Vapor Deposition at low temperatures (320 oC). The device consists of consecutive layers of silicon oxide and silicon nitride films with appropriated refractive indices and thickness to function as an interferential filter in the visible region. The optical results of these devices are comparable to the numerical simulations previously realized, showing an attenuation peak in the transmittance curve at approximately 680 nm. Also, when an angular variation between the incident light beam and the optical filter is produced, a shift in the attenuation peak is observed, which is due to a difference in the optical path of the incident beam. This behavior agrees with simulated results. When a change in temperature is applied to the optical device, a shift in the attenuation peak is also observed, which is related to the thermo-optic effect (TOE) of this kind of material. These results demonstrate that it is possible to control the optical output power of the device through the adequate control of the angle of the incident beam and/or temperature of the device.
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