Abstract:We propose a reconfigurable and non-volatile Bragg grating in the telecommunication C-band based on the combination of novel low-loss phase-change materials (specifically Ge2Sb2Se4Te1 and Sb2S3) with a silicon nitride platform. The Bragg grating is formed by arrayed cells of phase-change material, whose crystallisation fraction modifies the Bragg wavelength and extinction ratio. These devices could be used in integrated photonic circuits for optical communications applications in smart filters and Bragg mirrors and could also find use in tuneable ring resonators, Mach-Zehnder interferometers or frequency selectors for future laser on chip applications. In the case of Ge2Sb2Se4Te1, crystallisation produces a Bragg resonance shift up to ∼ 15 nm, accompanied with a large amplitude modulation (insertion loss of 22 dB). Using Sb2S3, low losses are presented in both states of the phase change material, obtaining a ∼ 7 nm red-shift in the Bragg wavelength. The gratings are evaluated for two period numbers, 100 and 200 periods. The number of periods determines the bandwidth and extinction ratio of the filters. Increasing the number of periods increases the extinction ratio and reflected power, also narrowing the bandwidth. This results in a trade-off between device size and performance. Finally, we combine both phase-change materials in a single Bragg grating to provide both frequency and amplitude modulation. A defect is introduced in the Sb2S3 Bragg grating, producing a high quality factor resonance (Q ∼ 104) which can be shifted by 7 nm via crystallisation. A GSST cell is then placed in the defect which can modulate the transmission amplitude from low loss to below -16 dB.

Reconfigurable Hybrid Silicon Waveguide Bragg Filter Using Ultralow-Loss Phase-Change Material.

Narrow-Band Add-Drop Filter Based on Cladding-Modulated Apodized Multimode Bragg Grating

Integrated Bragg grating filters based on silicon-Sb2Se3 with non-volatile bandgap engineering capability

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

On-chip sub-wavelength Bragg grating design based on novel low loss phase-change materials

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Reconfigurable InP waveguide components using the Sb2S3 phase change material

Nonvolatile Tuning of Bragg Structures Using Transparent Phase-Change Materials

Electrically Reconfigurable Non-Volatile On-Chip Bragg Filter with Multilevel Operation

Silicon Band-Rejection and Band-Pass Filter Based on Asymmetric Bragg Sidewall Gratings in A Multimode Waveguide

A Low Loss Band-Rejection And Band-Pass Filter Based On Silicon Photonic Multimode Bragg Gratings

Ultra-Broadband Optical Filter Based on Step-Chirped Multimode Waveguide Bragg Grating

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Hitless and Gridless Reconfigurable Optical Add Drop (de)multiplexer Based on Looped Waveguide Sidewall Bragg Gratings on Silicon

Widely Tunable Photonic Filter Based on Equivalent Chirped Four-Phase-Shifted Sampled Bragg Gratings

Narrow-band Add-Drop Filters Based on Silicon Nitride Multimode Waveguide Bragg Grating

Fast Reversible Phase Change Silicon for Visible Active Photonics

Designing a Switchable High-Optical-contrast Material Platform for Visible Reconfigurable Nanophotonics

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Phase-change Silicon As an Ultrafast Active Photonic Platform.