Abstract:Visualization of material composition across numerous grains and complicated networks of grain boundaries using image processing techniques can reveal fresh insights into the material’s structural evolution and upcoming functional capabilities for a variety of applications. Three-dimensional integrated circuits (3D IC) are the most practical technology for increasing transistor density in future semiconductor applications. One of the key benefits of 3D IC is heterogeneous integration, which results in shorter interconnections due to vertical stacking. However, one of the most significant challenges in building higher-density microelectronics devices is the stress generated by material mismatches in the coefficient of thermal expansion (CTE). The purpose of this study is to analyze grain boundary migration caused by variations in strain energy density using image processing methods for 3D grain continuum modeling. Temperature changes in polycrystalline structures generate stresses and strain energy densities, which may be calculated using FEM software. Single crystal Cu’s anisotropic elastic properties are twisted to suit grain orientation in space and each grain is treated as a single crystal. Grain boundary speeds are calculated using a simple model that relates grain boundary mobility to variations in strain energy density on both sides of grain boundaries. Using the grain continuum model, researchers will be able to investigate the effect of thermally generated stresses on grain boundary motion caused by atomic flux driven by strain energy. Using finite-element modeling of the grain structure in a Through Silicon Via, the stress effect on grain boundaries caused by grain rotation due to CTE mismatch was investigated (TSV). The structure must be modeled using a scanning electron microscopes Electron Backscatter Diffraction (EBSD) image (SEM). Grain growth and subsequent grain boundary rotation can be performed using the appropriate extrapolation method to measure their influence on stress and, as a result, the TSV’s overall reliability.

Damage Process of Polycrystalline LSI Conductor Due to Atom Migration Induced by Electric Current and Stress

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

The Effects of the Stress Dependence of Atomic Diffusivity on Stress Evolution Due to Electromigration

Simulation on Interplay Between Morphological Evolution and Defect in Polycrystalline TSV During EM

Equilibrium Current Density Balancing Two Atomic Flows in Coupled Problems of Electromigration and Thermomigration in Unpassivated Gold Film

Damage Nucleation During Electromigration along an Isolated Interface in an Elastic Medium

Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics

The effect of stress migration on electromigration in dual damascene copper interconnects

An Electro-Thermo-mechanical Coupling Phase-Field Model of Defect Evolution Induced by Electromigration in Interconnects

Current-Induced Energy Barrier Suppression For Electromigration From First Principles

A multi-phase-field model of void crossing grain boundary under electromigration-induced anisotropic surface diffusion in interconnects

Grain boundaries-dominated migration failure of copper interconnect under multiphysics field: Insight from theoretical modeling and finite element analysis

Atomic-Scale Investigation of Electromigration with Different Directions of Electron Flow into High-Density Nanotwinned Copper through In Situ HRTEM

Image Processing-Based Method of Evaluation of Stress from Grain Structures of Through Silicon Via (TSV)

Connecting the phase-field-crystal model of electromigration with electronic and continuum theories

Migration of grain boundary triple junctions in nanocrystalline metals initiated by accumulated dislocations

Physics-based Electromigration Modeling and Assessment for Multi-Segment Interconnects in Power Grid Networks.

Electrical transport characteristics of atomic contact and nanogap dynamically formed by electromigration

A Study of Strain-Driven Nucleation and Extension of Deformed Grain: Phase Field Crystal and Continuum Modeling

Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model