Abstract:Background: The insatiable need for low-power and high-performance integrated circuit (IC) results in the development of alternative options for metal oxide semiconductor field effect transistor (MOSFET) in the ultra-nanoscale regime. The practical challenge of the device scaling limits the use of MOSFET for future technology nodes. ICs are equipped with billions of transistors whose size must be scaled while increasing performance. As the size of the transistor shrinks for the new technology node, the control of the gate over the channel also reduces, leading to sub-threshold leakage. The non-planar technology is the potential methodology to design the ICs for the future technology nodes. The fin-shaped field effect transistor (FinFET) is the most valuable non-planar technology. High sub-threshold slope, better short channel effect (SCE) control, high current drive strength, low dopant-prompted variations, and decreased power dissipation are the prominent features of FinFET technology. Objective: FinFET is an advanced version of MOSFET in terms of geometrical structure. Therefore, in this review paper, the different geometrical structures, working operations, design challenges, future aspects, and the different configurations of FinFETs are presented. The performance of the different configurations of a 1-bit full adder is evaluated and compared. Methods: An overview of FinFET evolution from the planar MOSFET, along with its architecture supported by the requisite equations, is presented in the paper. Besides this, it also gives an insight into the circuit simulation using the FinFETs for the process voltage temperature (PVT) variations, width quantization, design challenges, and the future of FinFETs. A comparative study of FinFET-based 1-bit full adder using various techniques is done to compute and compare the leakage power, delay, and power delay product (PDP). Results: The full adders using FinFETs show less leakage power and PDP. The AND-OR logicbased hybrid full adder using FinFETs shows the least energy consumption per switching. Fin- FET-based gate diffusion input adder shows a 74 % reduction in dynamic power compared to the full adder using MOSFET technology. The low power FinFET-based full adder shows a 54.16 % reduction in leakage power compared to the MOSFET-based full adder. The results signify the effect of multi-gates in curbing the leakage power dissipation. Conclusion: MOSFET faces the practical challenge of device scaling and SCEs at lower technology nodes. It initiates the multi-gate technology for future system generation. FinFET has the capability to design low-power and high-performance circuits in an ultra-nanoscale regime. The geometrical structure of FinFET plays a key role to improve the performance metrics in an ultrananoscale regime.

Review of FinFET Devices and Perspective on Circuit Design Challenges

Review of the Nanoscale FinFET Device for the Applications in Nano-regime

Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications

FinFET to GAA MBCFET: A Review and Insights

Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications

Strategic Review on Different Materials for FinFET Structure Performance Optimization

Design Considerations into Circuit Applications for Structurally Optimised FinFET

Advantages, manufacturing processes and challenges of FinFET technology

Review of Advanced CMOS Technology for Post-Moore Era

Recent Research Development of FinFETs

Design and Simulation of FinFET based digital circuits for low power applications

From MOSFET to FinFET to GAAFET: The evolution, challenges, and future prospects

Transistor Engineering Based on 2D Materials in the Post-Silicon Era

Field-Effect Transistors Based on Two-dimensional Materials (Invited)

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Impact of Buried Gate Oxide on the Electrical Performance of Negative Capacitance FinFETs: Design Perspectives

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Keynote; Material Challenges and Opportunities in Ge/III-V Channel MOSFETs