Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

Some Characteristics of a Micro-Mechanical Resonator Integrated with Laser Diodes by AlGaAs/GaAs Micromachining.

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

Toward On-Chip Unidirectional and Single-Mode Polymer Microlaser

Monolithic Integration of a Lithium Niobate Microresonator with a Free-Standing Waveguide Using Femtosecond Laser Assisted Ion Beam Writing.

Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

Fabrication of high-Q microresonators in dielectric materials using a femtosecond laser: Principle and applications

Monolithic Integration of a High-Quality Factor Lithium Niobate Microresonator with a Free-Standing Membrane Waveguide Using Femtosecond Laser Assisted Ion Beam Writing (FLAIBW)

Coherent mode-combined ultra-narrow-linewidth single-mode micro-disk laser

Femtosecond Laser Processing of Microcavity Lasers

Theory and experiment study of micro/nano photothermal expansion

Low-threshold whispering-gallery-mode microlasers fabricated in a Nd: glass substrate by three-dimensional femtosecond laser micromachining

Chip-integrated 2-micrometer wavelength micro laser

Advances and Prospects for Whispering Gallery Mode Microcavities

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Single mode lasing from a coupled asymmetric microcavity

Single-mode Unidirectional Microcavity Laser.

High-$β$ lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots

Fabrication and Characterization of A Micromachined Acoustic Sensor with Integrated Optical Readout

Low voltage driving coupled-cavity electro-optically Q-switched microchip lasers