Influence of ion beam parameters on the electrical and optical properties of ion‐assisted reactively evaporated vanadium dioxide thin films

F. C. Case
DOI: https://doi.org/10.1116/1.574534
1987-07-01
Abstract:Large reductions in the phase transition temperature of vanadium dioxide thin films have been achieved in the past by doping with elements such as tungsten or niobium; however, considerable degradation of electrical and optical properties are routinely observed. In this investigation, a technique is described which significantly reduces the transition temperature to doped values, without sacrificing film quality. Vanadium oxide films were deposited at room temperature by ion-assisted reactive evaporation and subsequently annealed in flowing oxygen. Deposition parameters include a range of argon-to-oxygen ion ratios, ion energies and fluxes, and background oxygen pressures. The impact of these parameters on microstructural, electrical, and optical properties, as well as on transition temperature, will be discussed.
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