Abstract:Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic or electro-optic effects, such systems usually exhibit limited reconfigurability along with high energy consumption and large footprints. These challenges can be addressed by resorting to chalcogenide phase-change materials (PCMs) such as Ge2Sb2Te5 (GST) that provide substantial optical contrast in a self-holding fashion upon phase transitions. However, current PCM-based integrated photonic applications are limited to single devices or simple PICs due to the poor scalability of the optical or electrical self-heating actuation approaches. Thermal-conduction heating via external electrical heaters, instead, allows large-scale integration and large-area switching, but fast and energy-efficient electrical control is yet to show. Here, we model electrical switching of GST-clad integrated nanophotonic structures with graphene heaters based on the programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and high in-plane thermal conductivity of graphene, the proposed structures exhibit a high switching speed of ~80 MHz and high energy efficiency of 19.2 aJ/nm^3 (6.6 aJ/nm^3) for crystallization (amorphization) while achieving complete phase transitions to ensure strong attenuation (~6.46 dB/micron) and optical phase (~0.28 dB/micron at 1550 nm) modulation. Compared with indium tin oxide and silicon p-i-n heaters, the structures with graphene heaters display two orders of magnitude higher figure of merits for heating and overall performance. Our work facilitates the analysis and understanding of the thermal-conduction heating-enabled phase transitions on PICs and supports the development of the future large-scale PCM-based electronic-photonic systems.

Development and evaluation of germanium telluride phase change material based ohmic switches for RF applications

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

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Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Multiphysics simulations of a cylindrical waveguide optical switch using phase change materials on silicon

Design and Performance Analysis of Silica-Based Thermo-Optical Switches Operating in O-Band and C-Band

Effect of Deposition Pressure and Temperature on Tungsten Thin-Film Heater for Phase-Change Switch Applications

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

Silicon Thermo-Optic Switches with Graphene Heaters Operating at Mid-Infrared Waveband

High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

Three-Terminal Probe Reconfigurable Phase-Change Material Switches

Mid-IR non-volatile silicon photonic switches using nanoscale Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} embedded in SOI waveguide

Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

Electrode area dependent switching behavior of Ge2Sb2Se4Te1 phase change material driven by narrow voltage pulse

The method to improve the speed of RF switches based on vanadium dioxide

Symmetric multiplexing 2×2 guideway optical switch based on phase change material