Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Effect of Gamma Irradiation on Photoelectric Parameters of Double-Barrier Structure Based on Silicon

Graphene-silicon-graphene Schottky Junction Photodetector with Field Effect Structure.

Study of the characteristics of an irradiated 4H-SiC charge particle detector

Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes

Investigation of Semi-Insulating Gallium Arsenide Photoconductive Photodetectors

On the Selective Spectral Sensitivity of Oppositely Placed Double-Barrier Structures

Mg ion implantation and post-annealing effect on the photoelectrical performance of a β-Ga2O3 photodetector

Photoelectric property degradation of graded barrier InAs/GaSb type II superlattice long-wave infrared detectors under 1 MeV electron irradiation

Study of bulk damage of high dose gamma irradiated p-type silicon diodes with various resistivities

Effects of Gamma Irradiation on AlGaN Schottky UV Detector

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Improvement of β-Ga2O3-based Schottky barrier UV photodetector by 4H-SiC substrate, intrinsic buffer layer, and graphene surface contact

Effect of Gamma Irradiation on -Ga2o3 Vertical Schottky Barrier Diode

Gamma-Rays Irradiation - an Effective Method for Improving Light-Emission Stability of Porous Silicon

Effect of Gamma Ray Irradiation on Silicon Photodiodes

Influence of barrier layer on photoelectric properties of black silicon photodetectors

Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga2O3 solar-blind photodetector

A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures