Effects of LaNiO3 interlayer on the microstructures and electrical properties of Ba0.9Sr0.1Ti0.99Mn0.01O3 multilayer

Xuekun Hong,Tan Shao,Xueyi Shao,Tao Wang,Debao Zhang,Yushen Liu,Jinfu Feng
DOI: https://doi.org/10.1007/s11595-016-1526-1
2016-12-01
Abstract:The aim of this work was to investigate the effects of low-resistivity interlayer on the physical properties of periodic Ba0.9Sr0.1Ti0.99Mn0.01O3 (BSTM) multilayers prepared by a chemical solution deposition method. A LaNiO3 (LNO) layer was inserted into the periodic BSTM multilayer artificially to form a sandwiched configuration of BSTM/LNO/BSTM. The capacitances at low frequencies (<100 kHz) of the sandwiched multilayer are significantly enhanced compared to that of the pure BSTM multilayer. The space charge accumulated at the LNO layer was proposed to explain the enhancement based on Maxwell-Wagner (M-W) model. However, LNO interlayer leads to an increase in the leakage current. A non-Ohmic conduction region is observed for BSTM/LNO/BSTM multilayer when the electric field exceeds 100 kV/cm. The results offer a new approach to achieve dielectric films with high dielectric constant.
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