Effect of Codopant Ions on the IR Photoluminescence of Cu2+ Impurity Centers in Corundum (α-Al2O3)

A. N. Romanov,E. V. Haula,A. A. Kapustin,A. M. Kuli-zade,V. N. Korchak

DOI: https://doi.org/10.1134/s0020168523110109

2024-03-12

Inorganic Materials

Abstract:We have studied broadband (1000–1600 nm) IR photoluminescence of polycrystalline corundum (α-Al 2 O 3 ) samples containing copper impurity ions and additionally doped with ions of elements in the oxidation state 4+: Si 4+ , Ge 4+ , Ti 4+ , Zr 4+ , Hf 4+ , and Sn 4+ . The results demonstrate that the IR photoluminescence intensity in corundum singly doped with copper is rather low. Additional doping of corundum with some tetravalent cations sharply increases the luminescence intensity. The largest increase in Cu 2+ IR photoluminescence intensity is obtained in the case of additional doping with Ti 4+ , Ge 4+ , or Sn 4+ cations. It seems likely that these ions ensure charge compensation when incorporated into the corundum lattice together with Cu 2+ ions, so that the substitution process can be represented as 2Al 3+ → Cu 2+ + M 4+ (M 4+ = Ti 4+ , Ge 4+ , Sn 4+ ,...). In this way, the additional doping of corundum with tetravalent ions raises Cu 2+ solubility in α-Al 2 O 3 , leading to photoluminescence enhancement in the material.

materials science, multidisciplinary