Abstract:Ferroelectric materials, characterized by their polarization switching capabilities, have emerged as promising candidates for non-volatile memory applications due to their fast operation speeds, low switching energies, and remarkable scalability. Among these, hafnia-based ferroelectrics are particularly noted for their compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, the development of high-quality ferroelectricity in ultra-thin films, essential for low-voltage operations and high-density integrations, remains challenging. This study introduces a novel low-damage metallization process designed to fabricate ultra-thin (sub-5 nm) ferroelectric films exhibiting exceptional ferroelectric properties and reliability. The process, compatible with standard CMOS techniques, achieves a significant remnant polarization ( P r ) of 40 μC cm −2 and low leakage currents, alongside enhanced retention characteristics. Crucially, it substantially mitigates the wake-up effect, often attributed to oxygen vacancy redistribution at the interface. Through comprehensive analyses utilizing electron energy loss spectroscopy (EELS), geometric phase analysis (GPA) and X-ray photoelectron spectroscopy (XPS), we demonstrate that our process effectively reduces oxygen vacancies and dislocations at the top interface of the ferroelectric film. The enhanced reliability of ferroelectric random-access memory (FeRAM), evidenced by improved sensing margins and consistency in ferroelectric properties, marks a substantial improvement over the conventional method. To precisely measure reliability characteristics, we propose a new retention model that considers charge screening over time. Moreover, circuit-level simulations via non-volatile memory simulator (NVSim) validate the process's integration potential with existing CMOS technologies, affirming its suitability for advanced, high-density memory configurations without compromising performance or energy efficiency. The findings from this study pave the way for broader applications of nanoscale high-quality dielectric thin films, extending beyond ferroelectric materials to various technological domains requiring advanced material solutions.

Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell

Exploration of structural influences on ferroelectric switching characteristics in ferroelectric thin-film transistors

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

Direct Observations Of Retention Failure In Ferroelectric Memories

Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

Interfacial Layer Selection Methodology for Customized Ferroelectric Memories

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

Defect-mediated Polarization Switching in Ferroelectric Films for Low-Power-consuming and Ultra-High-density Memories

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory

Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics

Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement

Determining the Influence of Ferroelectric Polarization on Electrical Characteristics in Organic Ferroelectric Field-Effect Transistors

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-Kappa Intergate Dielectrics of Flash Memory Cells