Abstract:Understanding the band structure evolution of (AlxGa1−x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic β-phase (AlxGa1−x)2O3 (0 ≤ x ≤ 0.54) films with a preferred (−201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (αhν)1/2 ∝ (hν-E) unambiguously identifies that β-(AlxGa1−x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of β-(AlxGa1−x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and Г points in the valence band. The experimentally determined indirect bandgap exhibits almost a linear relationship with Al composition, which is consistent with the theoretical calculation and indicates a small bowing effect and a good miscibility. The identification and modulation of (AlxGa1−x)2O3 band structures allows rational design of ultra-wide bandgap oxide heterostructures for the applications in power electronics and solar-blind or X-ray detection.Understanding the band structure evolution of (AlxGa1−x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic β-phase (AlxGa1−x)2O3 (0 ≤ x ≤ 0.54) films with a preferred (−201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (αhν)1/2 ∝ (hν-E) unambiguously identifies that β-(AlxGa1−x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of β-(AlxGa1−x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and Г points in the valence b...

Bandgap engineering and Schottky barrier modulation of ultra-wide bandgap Si-doped β-(Al x Ga 1-x ) 2 O 3 single crystal

Bandgap Engineering and Schottky Barrier Modulation of Ultra-Wide Bandgap Si-doped Β-(Alxga1-x)2o3 Single Crystals

Ultrawide bandgap vertical β-(AlxGa1−x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Identification and modulation of electronic band structures of single-phase β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> alloys grown by laser molecular beam epitaxy

Efficient Thermal Dissipation in Wafer-Scale Heterogeneous Integration of Single-Crystalline Β-Ga2o3 Thin Film on SiC

Interface engineering in epitaxial growth of sputtered β-Ga 2 O 3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

Device topological thermal management of β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes*

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

Identification And Modulation Of Electronic Band Structures Of Single-Phase Beta-(Alxga1-X)(2)O-3 Alloys Grown By Laser Molecular Beam Epitaxy

Device Topological Thermal Management of Β-Ga 2 O 3 Schottky Barrier Diodes

Characteristics of grafted monocrystalline Si/ β -Ga2O3 p – n heterojunction

Schottky Barrier Diode Based On Beta-Ga2o3 (100) Single Crystal Substrate And Its Temperature-Dependent Electrical Characteristics

Β-Ga2o3 Junction Barrier Schottky Diode with NiO P-Well Floating Field Rings

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al x Ga 1‒ x ) 2 O 3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga 2 O 3 /Al 2 O 3 Heterojunction at High Temperatures

Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy