Abstract:β-Ga 2 O 3 with ultrahigh bandgap has emerged as a promising material for next-generation power semiconductors owing to its superior electrical properties. However, its low-thermal conductivity presents challenges for heat dissipation under high-power conditions. In this study, we propose and investigate an efficient device structure for β-Ga 2 O 3 devices featuring Cu-filled thermal through-vias to facilitate direct heat dissipation from the channel to the exterior parts. Through-vias were formed in the β-Ga 2 O 3 substrate using ultraviolet laser drilling and subsequently filled with highly thermally conductive Cu using electroplating. The thermal performance of the Cu-filled through-vias was assessed by applying low (1.2 W/mm3) and high (5.7 W/mm3) power settings to the device and analyzing the surface temperature with a high-resolution thermal imaging camera. Finite element simulations were employed to verify the heat dissipation improvement achieved by the thermal vias. Experimental results demonstrate that at 5.7 W/mm3, the temperature increase is suppressed by approximately 21%, and the time to reach peak temperature steady-state decreases by approximately 90% when a thermal through-via is used. The simulation results demonstrate a temperature reduction effect of approximately 33%, which is more effective than the experimental observations. Additional simulations indicated that two or more thermal vias with diameters <100 μm symmetrically positioned near the channel could yield heat dissipation improvements over 40%. These findings suggest that Cu-filled thermal vias effectively enhance heat dissipation in high-power β-Ga 2 O 3 devices, thereby overcoming limitations associated with their lower thermal conductivities and enhancing their potential as next-generation power semiconductors.

Device Topological Thermal Management of Β-Ga 2 O 3 Schottky Barrier Diodes

Device topological thermal management of β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes*

Thermal characterization of gallium oxide Schottky barrier diodes

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Efficient Thermal Dissipation in Wafer-Scale Heterogeneous Integration of Single-Crystalline Β-Ga2o3 Thin Film on SiC

Three-dimensional thermal analysis of heterogeneously integrated β -Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces

The optimized interface characteristics of β -Ga 2 O 3 Schottky barrier diode with low temperature annealing

Enhancement of Heat Dissipation in β-Ga2O3 Schottky Diodes through Cu-filled Thermal Vias: Experimental and Simulation Investigations

70-Μm-body Ga2O3 Schottky Barrier Diode with 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

Schottky Barrier Diode Based On Beta-Ga2o3 (100) Single Crystal Substrate And Its Temperature-Dependent Electrical Characteristics

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination

Improved Β-Ga2o3 Schottky Barrier Diodes Via Thermal Oxidation of Titanium Insertion Layer

Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes

8.7 A/700 V β-Ga 2 O 3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Transient Characteristics of $β$-Ga$_2$O$_3$ Nanomembrane Schottky Barrier Diodes on Various Substrates

An Overview of the Ultrawide Bandgap Ga 2 O 3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application