Abstract:β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (EG ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today's commercial wide bandgap power electronics based on GaN and SiC. However, overheating has been identified as a major bottleneck to the performance and commercialization of Ga2O3 device technologies. In this work, a novel Ga2O3/4H-SiC composite wafer with high heat transfer performance and an epi-ready surface finish has been developed using a fusion-bonding method. By taking advantage of low-temperature metalorganic vapor phase epitaxy, a Ga2O3 epitaxial layer was successfully grown on the composite wafer while maintaining the structural integrity of the composite wafer without causing interface damage. An atomically smooth homoepitaxial film with a room-temperature Hall mobility of ∼94 cm2/Vs and a volume charge of ∼3 × 1017 cm-3 was achieved at a growth temperature of 600 °C. Phonon transport across the Ga2O3/4H-SiC interface has been studied using frequency-domain thermoreflectance and a differential steady-state thermoreflectance approach. Scanning transmission electron microscopy analysis suggests that phonon transport across the Ga2O3/4H-SiC interface is dominated by the thickness of the SiNx bonding layer and an unintentionally formed SiOx interlayer. Extrinsic effects that impact the thermal conductivity of the 6.5 μm thick Ga2O3 layer were studied via time-domain thermoreflectance. Thermal simulation was performed to estimate the improvement of the thermal performance of a hypothetical single-finger Ga2O3 metal-semiconductor field-effect transistor fabricated on the composite substrate. This novel power transistor topology resulted in a ∼4.3× reduction in the junction-to-package device thermal resistance. Furthermore, an even more pronounced cooling effect is demonstrated when the composite wafer is implemented into the device design of practical multifinger devices. These innovations in device-level thermal management give promise to the full exploitation of the promising benefits of the UWBG material, which will lead to significant improvements in the power density and efficiency of power electronics over current state-of-the-art commercial devices.

Enhancement of Heat Dissipation in β-Ga2O3 Schottky Diodes through Cu-filled Thermal Vias: Experimental and Simulation Investigations

Device topological thermal management of β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes*

Device Topological Thermal Management of Β-Ga 2 O 3 Schottky Barrier Diodes

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Efficient Thermal Dissipation in Wafer-Scale Heterogeneous Integration of Single-Crystalline Β-Ga2o3 Thin Film on SiC

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces

Three-dimensional thermal analysis of heterogeneously integrated β -Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

Thermal characterization of gallium oxide Schottky barrier diodes

Thermal Transport Properties of β-Ga 2 O 3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

Thermal conductance across β-Ga 2 O 3 -diamond van der Waals heterogeneous interfaces

Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces

Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

Simulation on Heat Transfer of Microchannels and Thermal Vias for High Power Electronic Packages

Simulation on an Advanced Double-Sided Cooling Flip-Chip Packaging with Diamond Material for Gallium Oxide Devices

Influence of Substrate and Gate Insulator on the Thermal Characteristics of Β-Ga2o3 Field-Effect Transistors: A Simulation Study