Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.

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Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Ultrathin Silicon Loop Mirror Reflector for 2D PtSe2-On-Waveguide Optical Absorption Enhancement

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

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Edge‐Orientation Dependent Nanoimaging of Mid‐Infrared Waveguide Modes in High‐Index PtSe 2

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Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

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Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed

Scalable fabrication of long-wave infrared PtSe 2 -G heterostructure array photodetectors

Large-scale Fabrication of High-Quality PtSe2 Film Via Magnetron Sputtering for NIR Detection

High-performance Near-Infrared PtSe2/n-Ge Heterojunction Photodetector with Ultrathin Al2O3 Passivation Interlayer

Scalable Fabrication Of Long-Wave Infrared Ptse2-G Heterostructure Array Photodetectors

Enhanced Broadband Light Absorption of Ultrathin PtSe2 in Metal–insulator–metal Structure

Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector