The Effect of Process Annealing on the Recrystallization of Lamp Grade Tungsten

G. Nagy,L. Uray
DOI: https://doi.org/10.1515/HTMP.1994.13.1.17
Abstract:The effect of process annealing was studied on K-Al-Si doped tungsten wires drawn from a diameter of 0.39 mm to 0.125 mm according to the same drawing schedule, but wire A undergoing no process annealing, wire Β process annealed at 0.39 mm, wire C at 0.18 mm and wire D both at 0.39 mm and at 0.18 mm. The exaggerated grain growth started in wires A and Β at 2600 K, while in wires C and D it started already at about 2200 K. The coiling decreased these temperatures to about 2000 Κ or 1800 K, respectively. The changes in the microstructure have been followed up by scanning metallography and by the measurement of the excess electrical resistivity. (Upon microstructural coarsening the excess resistivity is proportional to the grain boundary area per unit volume.) Torsion tests were also made to reveal the possible brittleness after annealing at temperatures below the range of the exaggerated grain growth.
Materials Science
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