Abstract:Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian. The electron-hole exchange interaction Hamiltonian, which consists of the long- and short-range parts, is derived within the effective-mass approximation by taking into account the conduction, heavy- and light-hole bands, and especially the split-off band. The scheme applied in this work allows the description of excitons in both the strong and weak confinement regimes. The importance of treating the direct electron-hole Coulomb interaction unperturbatively is demonstrated. We show in our calculation that the light-hole and split-off bands are negligible when considering the exciton fine structure, even for GaN quantum dots, and the short-range exchange interaction is irrelevant when considering the optically active doublet splitting. We point out that the long-range exchange interaction, which is neglected in many previous works, contributes to the energy splitting between the bright and dark states, together with the short-range exchange interaction. Strong dependence of the optically active doublet splitting on the anisotropy of dot shape is reported. Large doublet splittings up to 600 $\mu$eV, and even up to several meV for small dot size with large anisotropy, is shown in GaN quantum dots. The spin relaxation between the lowest two optically active exciton states in GaN quantum dots is calculated, showing a strong dependence on the dot anisotropy. Long exciton spin relaxation time is reported in GaN quantum dots. These findings are in good agreement with the experimental results.

Spin transport of indirect excitons

Spin transport of indirect excitons in GaAs coupled quantum wells

Long exciton spin memory in coupled quantum wells

Drift mobility of long-living excitons in coupled GaAs quantum wells

Transition from spin-orbit to hyperfine dominated spin relaxation in a cold fluid of dipolar excitons

Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles

Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells

Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment

Electric field control of spin-orbit splittings in GaAs/AlGaAs coupled quantum wells

Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells

A quantitative study of spin-flip co-tunneling transport in a quantum dot

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Long-distance decay-less spin transport in indirect excitons in a van der Waals heterostructure

Spin sensitive bleaching and monopolar spin orientation in quantum wells

Spin Dynamics in GaN/Al0.1Ga0.9N Quantum Well with Complex Band Edge Structure

Interband Excitation Induced Spinphotocurrent Inan InGaAs/InAlAs Two-Dimensional Electron Gas

Theory of Excitons in Cubic III-V Semiconductor GaAs, InAs and GaN Quantum Dots: Fine Structure and Spin Relaxation

Spin Photocurrents in Quantum Wells review part II, (part I: <a class="link-https" data-arxiv-id="cond-mat/0304266" href="https://arxiv.org/abs/cond-mat/0304266">cond-mat/0304266</a>)

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Spin transport study in a Rashba spin-orbit coupling system

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots