Preparation and Properties of Low-Dielectric Polyimide Films Containing Tert-Butyl

Xin Li,Rongrong Zheng,Cheng Wang,Haiyang Chang,Shuwu Chen,Liyan Wang,Xue Cui,Yutao Liu,Junhao Li,Guangning Yu,Ji Shi

DOI: https://doi.org/10.3390/polym16070984

IF: 5

2024-04-04

Polymers

Abstract:The design of high-performance polyimide (PI) films and understanding the relationship of the structure–dielectric property are of great significance in the field of the microelectronics industry, but are challenging. Herein, we describe the first work to construct a series of novel tert-butyl PI films (denoted as PI-1, PI-2, PI-3, and PI-4) based on a low-temperature polymerization strategy, which employed tetracarboxylic dianhydride (pyromellitic anhydride, 3,3′,4,4′-biphenyl tetracarboxylic anhydride, 4,4′-diphenyl ether dianhydride, and 3,3′,4,4′-benzophenone tetracarboxylic anhydride) and 4,4′-diamino-3,5-ditert butyl biphenyl ether as monomers. The results indicate that introducing tert-butyl branches in the main chain of PIs can enhance the free volume of the molecular chain and reduce the interaction between molecular chains of PI, resulting in a low dielectric constant. Particularly, the optimized PI-4 exhibits an excellent comprehensive performance with a high (5) wt% loss temperature (454 °C), tensile strength (117.40 MPa), and maximum hydrophobic angle (80.16°), and a low dielectric constant (2.90), which outperforms most of the results reported to date.

polymer science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to design high - performance polyimide (PI) films and deeply understand the relationship between their structures and dielectric properties in the context of the increasing demand for low - dielectric - constant and low - energy - consumption devices in the microelectronics industry. Although most existing PI films have good thermal stability, mechanical properties and dielectric properties, their dielectric constants are still relatively high (about 3.2 - 4.0) and cannot meet the requirements of more advanced microelectronic devices. Therefore, the goal of this paper is to reduce the dielectric constant of PI films by introducing tert - butyl side chains while maintaining or improving other properties, such as thermal stability, mechanical strength and hydrophobicity.

Specifically, the authors synthesized four new tert - butyl PI films with different anhydride - structure main chains (denoted as PI - 1, PI - 2, PI - 3 and PI - 4 respectively), and studied the properties of these films by a variety of characterization methods. The results show that the introduction of tert - butyl branches can increase the free volume of molecular chains and reduce the interactions between molecular chains, thereby significantly reducing the dielectric constant. In particular, the optimized PI - 4 exhibits excellent comprehensive properties, including a high weight - loss temperature (454 °C), a high tensile strength (117.40 MPa), a maximum hydrophobic angle (80.16°) and a low dielectric constant (2.90), which are better than most of the currently reported results.

In conclusion, this paper aims to develop high - performance PI films with lower dielectric constants without sacrificing other properties through reasonable molecular structure design, providing new material choices for the microelectronics industry.