Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Ultra-compact Si/In$_2$O$_3$ hybrid plasmonic waveguide modulator with a high bandwidth beyond 40 GHz

High-bandwidth Si/In2O3 Hybrid Plasmonic Waveguide Modulator

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

Electro-Optic Silicon Modulator With Horizontal Photonic Crystal Slot Slab

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

Plasmonic Optical Modulator based on Adiabatic Coupled Waveguides

Ultra-compact Silicon Modulator with 110 GHz Bandwidth.

High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer

Optical Performance Of Single-Mode Hybrid Dielectric-Loaded Plasmonic Waveguide-Based Components

Highly-efficient Graphene-based Silicon Hybrid Plasmonic Waveguide Modulator

Ultra-compact plasmonic modulator for optical inteconnects

Design of Ultracompact High‐Speed‐Integrated Lithium–Niobate Periodic Dielectric Waveguide Modulator

Silicon–Lithium Niobate Hybrid Intensity and Coherent Modulators Using a Periodic Capacitively Loaded Traveling-Wave Electrode

Design of a silicon-plasmonic hybrid electro-optic modulator

Design of on-chip plasmonic modulator with vanadium-dioxide in hybrid orthogonal junctions on Silicon-on-Insulator

Design and Analysis of a Miniature Intensity Modulator Based on a Silicon-Polymer-Metal Hybrid Plasmonic Waveguide

A Heterogeneous Silicon on Lithium Niobate Modulator for Ultra-Compact and High-Performance Photonic Integrated Circuits

Design of an Ultra-Compact Optical Modulator Based on A Silicon-Vanadium Dioxide Hybrid Waveguide

Ultrafast and Energy-Efficient Electro-Optic Modulation Based on a Hybrid Silicon/in2o3 Cavity