Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Universal Polaronic Behavior in Elemental Doping of MoS 2 from First-Principles

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

First Principles Study on Molecule Doping in MoS2 Monolayer

Insight into the Growth of Non-uniform Vanadium-Doped Molybdenum Disulfide for Tunable Electronic Properties

Ab initio study of bilateral doping within the MoS2-NbS2 system

Ab-initio study on the possible doping strategies for MoS$_2$ monolayers

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide

Tuning the Magnetic Properties of the Monolayer MoSe2 by Nonmetal Doping: First-principles Study

Tuning of Electronic States and Magnetic Polarization in Monolayered MoS2 by Codoping with Transition Metals and Nonmetals

Electronic structures of defects and magnetic impurities in MoS2 monolayers

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Near Unity Molecular Doping Efficiency in Monolayer MoS2

Controlled Doping Engineering in 2D MoS2 Crystals Toward Performance Augmentation of Optoelectronic Devices.

A First-Principles Study of Impurity Effects on Monolayer MoS2: Bandgap Dominated by Donor Impurities

Structural and Electronic Phase Transitions in Ferromagnetic Monolayer Vs2 Induced by Charge Doping

Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Novel doping alternatives for single-layer transition metal dichalcogenides

First-principles Study of Nonmetal Doped Monolayer MoSe2 for Tunable Electronic and Photocatalytic Properties