Abstract:The demand for renewable energy sources, including solar, is increasing every year, stimulating researchers to develop innovative technological solutions for obtaining material for photovoltaic modules - solar silicon. The article discusses a new process for the vapor transport of silicon in the form of sulfide compounds, which can serve as the basis for a halogen-free technology for producing high-purity silicon for photovoltaic batteries. Considering the well-known properties of silicon di- and monosulfide, it is proposed to use zinc sulfide as a carrier reagent, the presence of which in the Si-ZnS system first provides silicon sulfidization with the formation of gaseous products Zn (g) and SiS (g), and then the reduction of monosulfide to elemental silicon. The possibility of a chemical vapor transport reaction of silicon with zinc sulfide at a temperature above 1000 °C and a Si/ZnS ratio of 1 was justified by the method of the thermodynamic simulation of interactions in the Si-ZnS system in the temperature range 500-1500 °C. Based on the obtained equilibrium models of the interaction of zinc sulfide with technical silicon (grade Kr 2), the separation coefficients of (α) silicon from impurity elements that affect the electrophysical properties of silicon, in particular, reduce the lifetime of excess charge carriers, are calculated. The selectivity of this transport reaction and the prospects for its use for refining metallurgical silicon are estimated. It has been shown that the use of the silicon transfer reaction of zinc sulfide, for example, at 1100 °C, can provide deep purification of silicon from Fe, Ca, Ti, V, Cr, Mn and Cu (α ~ 108-1012), as well as Mg and Al (α ~ 104-106). The process is less effective for removing P and B (α ~ 102) and is not applicable for alkali metals in the entire studied temperature range. It is theoretically possible to improve the refining indexes by lowering the reaction temperature, but the necessary sulfur concentration in the gas phase for the complete conversion of silicon to SiS (g) is achieved only above 1050-1100 oC due to thermal dissociation of ZnS.

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Conversion of Methyltrichlorosilane in Stirred Bed Reactor by Methylalumminumchloride Method

Reaction of Mg2+ on the surface of silica in adsorption layer

Extraction of silica from natural deposits for the production of silicon in photovoltaic applications

Production of higher silanes in radio frequency SiH4 and H2-SiH4 plasmas

Synthesis of methylchlorosilane by direct process and its gas chromatographic analysis

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Preparation of Methyltrimethoxysilane Derived Silica Aerogel Films via Ambient Pressure Drying

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Directed Gas Phase Formation of Silene (H2 SiCH2 )

Influence of Silicon Size Distribution on Hydrochlorination Process of Solar-grade Silicon in Spouted Reactor via MP-PIC Approach

Exploration of photocatalytic chlorination combined simplified distillation to produce electronic grade high-purity trichlorosilane via microchannel reactor experiments, multiphase-flow simulation, ReaxFF MD, and DFT

Theoretical Study on the Decomposition Kinetics and Thermochemistry of Tetramethyldisilazane and Hexamethyldisilazane─Formation of Silanimine and Silene Species

Local high concentration alkali field accelerated silicon hydrolysis for hydrogen production

Nano‐Si for On‐Demand H2 Production: Optimization of Yield and Real‐Time Visualization of Si─H2O Reaction Using Liquid‐Phase Transmission Electron Microscopy

Hydrogen generation during the purification of metallurgical-grade silicon

Assessment of silicon purification possibility by chemical vapor transport reaction with zinc sulfide