Manipulating in-situ discrete carbide interlayer to achieve high thermal conductivity in Cu-B/diamond composite

Yongjian Zhang,Guangzhu Bai,Xiangyu Zhu,Jingjie Dai,Xitao Wang,Jinguo Wang,Moon J. Kim,Hailong Zhang

DOI: https://doi.org/10.1016/j.mtcomm.2023.105357

IF: 3.8

2023-01-12

Materials Today Communications

Abstract:Interface engineering is fundamental to enhancing the thermal conductivity of Cu/diamond composite as promising thermal management material. To overcome the inherently non-affinity and large acoustic mismatch between Cu and diamond, a carbide interlayer is widely used to modify the Cu/diamond interface. Here, we employ a metal matrix alloying route to generate an in-situ carbide interlayer as thin as 22 nm in between Cu-B matrix and diamond particle filler, which is otherwise impossible for the ex-situ diamond surface coating route. However, a discrete carbide interlayer is inevitably obtained to create the thin interlayer because of the in-situ nucleation and growth of the interfacial carbide with the metal matrix alloying route. This study maintains an elaborate balance between the carbide thickness and the carbide coverage of the discrete carbide interlayer by manipulating the gas pressure infiltration parameters. As a result, the thermal conductivity of 913 W/mK is attained in the Cu-B/diamond composite with a small carbide thickness of 90%, which is the highest thermal conductivity so far reported in boron-modified Cu/diamond composites. This study provides guidance for interface engineering in Cu/diamond composite to enhance the thermal conductivity for thermal management applications.

materials science, multidisciplinary