Abstract:Abstract Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A III B V , A II B VI , and potential alternatives to formerly mentioned—“ third wave ” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A III B V APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A III B V APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10 5 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

A review on III–V compound semiconductor short wave infrared avalanche photodiodes

Infrared avalanche photodiodes from bulk to 2D materials

Recent progress of innovative infrared avalanche photodetectors

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Avalanche photodiodes on silicon photonics

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Review on III–V Semiconductor Nanowire Array Infrared Photodetectors

Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Advances in InGaAs/InP Single-Photon Detector Systems for Quantum Communication

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Separate absorption, charge, and multiplication staircase avalanche photodiodes

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes Based on III-Nitride Semiconductors.

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Recent advances in InGaAs/InP single-photon detectors