Abstract:Chemiresistive gas sensing using metal oxide semiconductors has been rationalised in terms of reactions between gas phase species and the surface of the metal oxide either through oxygen vacancy creation/ passivation or ionosorbed charged oxygen species; however, no convincing spectroscopic evidence has been observed for the formation of gas sensing charged oxygen surface states. We have investigated the H2 sensing characteristics of Pt-coated BaTiO3 prepared by spark plasma sintering using a combination of electrochemical impedance spectroscopy (EIS) and synchrotron-based near-ambient pressure x-ray photoelectron spectroscopy (NAP-XPS). We reveal that for undoped BaTiO3, oxygen vacancies are formed at the surface of platinum coated BaTiO3 after reduction in hydrogen at 1000 °C, and, after controlled reoxidation in air at 470 °C, and are passivated by hydroxyl species detected using NAP-XPS over the temperature range 22 – 150 °C. EIS was used to monitor the change in electrical properties for both the reoxidation treatment at 470 °C and H2 gas sensing over the temperature range of 22–175 °C while moving through the Curie temperature of BaTiO3. NAP-XPS was used to determine the BaTiO3 surface species present as a function of H2 pressure and temperature. The results are discussed in terms of oxygen vacancy electron donor creation at the BaTiO3-Pt interface and grain boundaries, H2 dissociation on Pt and spillover onto BaTiO3, driving electronic transport in the conduction band, reaction of dissociated H2 with surface hydroxyl species, and the presence of temperature- and H2 concentration-dependent colossal dielectric permittivity and Schottky barrier height. As the H2 partial pressure increased, the grain boundary Arrhenius activation energies and pre-exponential factors followed the Meyer Neldel rule, indicating a possible relationship between activation energy and frequency of collisions in charge trapping centres. These observations confirm the presence of surface reactions between dissociated hydrogen, oxygen vacancies, adsorbed H2O, and hydroxyl species that possibly mediate the H2 spillover process, which drives the decrease in electrical resistance at the grain boundary regions.

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