Abstract:Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1–10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11–15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Scalable Solution Phase Synthesis of 2D Siloxene via a Two-Step Interlayer Expansion Process

High surface area siloxene for photothermal and electrochemical catalysis

Electrochemical molecular intercalation and exfoliation of solution-processable two-dimensional crystals

Solid Lithiation and Exfoliation for Scalable Synthesis of Two-Dimensional Nanosheets toward Industrialization

Designed Synthesis of Double-Stage Two-Dimensional Covalent Organic Frameworks

Ultrathin Two-dimensional Layered Composite Carbosilicates from in situ Unzipped Carbon Nanotubes and Exfoliated Bulk Silica

Sequential Infiltration Synthesis of Silicon Dioxide in Polymers with Ester Groups-Insight from In Situ Infrared Spectroscopy

Scalable Synthesis of 2D Si Nanosheets

Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate

Synthesis And Fast Transfer Of Monolayer Mos2 On Reusable Fused Silica

Single-Step Solution-Phase Synthesis of Free-Standing Two-Dimensional Polymers and Their Evolution into Hollow Spheres

Rapid and low-cost prototyping of 3D nanostructures with multi-layer hydrogen silsesquioxane scaffolds

Scalable and controllable synthesis of 2D high-proportion 1T-phase MoS2

Emulsion droplets as a dynamic interface for the direct and large-scale synthesis of ultrathin free-standing mesoporous silica films as well as 2D polymeric and carbon nanomaterials.

High-yield exfoliation of 2D semiconductor monolayers and reassembly of organic/inorganic artificial superlattices

Interlayer expansion of the layered zeolite precursor RUB-39: A universal method to synthesize functionalized microporous silicates

Solution-processable 2D semiconductors for high-performance large-area electronics

Extending on-surface synthesis from 2D to 3D by cycloaddition with C60

Intercalation-assisted Exfoliation Strategy for Two-dimensional Materials Preparation

Solution-phase Synthesis of One-dimensional Semiconductor Nanostructures

Building-block approach to discrete and sequence-specific oligosiloxanes