Abstract:Traditional TiN coatings cannot meet the requirements in many applications under extreme conditions because of their relatively low hardness (similar to2000Hv), high friction coefficient (>0.4), inade- quate thermal stability and insufficient corrosion. (Ti,Al)N coatings are a promising alternative to TiN coatings, which have recently been obtained by some groups. However, The deposition of coatings on ceramic substrates prepared by traditional physical vapor deposition was puzzled by low adhesions. In this work, (Ti,Al)N deposition was realized by a new technique namely pulsed high energy density plasma. The ratio of Ti and Al atoms was kept constant at 1:1, since this was known to be the best ratio for (Ti,Al)N synthesis. However, the process allows many other deposition parameters to be varied. In this study, the influences of the discharge voltage between the inner and outer electrode, the distance between the sample and the pulsed plasma gun, and the shot number of the pulsed plasma on coating formation and properties were investigated. Under the optimum deposition conditions, the adhesive strength of (Ti,Al)N coating to Si3N4 ceramic substrate was satisfactory with the critical load up to more than 80 mN. In addition, the coatings were investigated with respect to mechanical and wear behavior, including nanohardness, Young's modulus and cutting performances. The (Ti,Al)N coatings possess resulted very high values of nanohardness and Young's modulus, which are near to 40 GPa and 680 GPa, respectively. Because of the deposition of (Ti,Al)N coatings the wear resistance and edge life of the coated tools were improved dramatically evaluated by the cutting perforinances of the coated tools in turning HT250 (HB230) steel under industrial conditions. These improvements were attributed to a combination of four effects of deposition, ion implantation, quench and solid solution strengthening in terms of the structural analyses.

Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N 2 /H 2 Plasma at Room Temperature

Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature

Dry-etching properties of TiN for metal/high-k gate stack using BCl3-based inductively coupled plasma

Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF$_6/$H$_2$ plasma

Dry Etching Characteristics of TiN Thin Films in BCl 3 /He Inductively Coupled Plasma

Growth of conformal TiN thin film with low resistivity and impurity via hollow cathode plasma atomic layer deposition

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Nitrogen-Rich Titanium Nitride Serving As Pt-Al Diffusion Barrier For Feram Application

Investigation of Tialc by Atomic Layer Deposition As N Type Work Function Metal for Finfet

Preparation of Metal Nitride Particles Using Arc Discharge in Liquid Nitrogen

Characterization of Superhard Ternary (ti,al)n Coatings Prepared by Pulsed High Energy Density Plasma

Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET

Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

Investigation of atomic layer deposition methods of Al2O3 on n -GaN

Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

Dry etching of AlN films using the plasma generated by fluoride