LIC-CGAN: fast lithography latent images calculation method for large-area masks using deep learning

Yihan Zhao,Lisong Dong,Ziqi Li,Yayi Wei

DOI: https://doi.org/10.1364/oe.537921

IF: 3.8

2024-10-27

Optics Express

Abstract:Yihan Zhao, Lisong Dong, Ziqi Li, Yayi Wei Latent image calculation for large-area masks is an indispensable but time-consuming step in lithography simulation. This paper presents ... [Opt. Express 32, 40931-40944 (2024)]

optics

What problem does this paper attempt to address?

LithoGAN

Wei Ye,Mohamed Baker Alawieh,Yibo Lin,David Z. Pan

DOI: https://doi.org/10.1145/3316781.3317852

2019-01-01

Abstract:Lithography simulation is one of the most fundamental steps in process modeling and physical verification. Conventional simulation methods suffer from a tremendous computational cost for achieving high accuracy. Recently, machine learning was introduced to trade off between accuracy and runtime through speeding up the resist modeling stage of the simulation flow. In this work, we propose LithoGAN, an end-to-end lithography modeling framework based on a generative adversarial network (GAN), to map the input mask patterns directly to the output resist patterns. Our experimental results show that LithoGAN can predict resist patterns with high accuracy while achieving orders of magnitude speedup compared to conventional lithography simulation and previous machine learning based approach.
Light and Matter Co-Confined Multi-Photon Lithography

Lingling Guan,Chun Cao,Xi Liu,Qiulan Liu,Yiwei Qiu,Xiaobing Wang,Zhenyao Yang,Huiying Lai,Qiuyuan Sun,Chenliang Ding,Dazhao Zhu,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1038/s41467-024-46743-5

IF: 16.6

2024-01-01

Nature Communications

Abstract:Mask-free multi-photon lithography enables the fabrication of arbitrary nanostructures low cost and more accessible than conventional lithography. A major challenge for multi-photon lithography is to achieve ultra-high precision and desirable lateral resolution due to the inevitable optical diffraction barrier and proximity effect. Here, we show a strategy, light and matter co-confined multi-photon lithography, to overcome the issues via combining photo-inhibition and chemical quenchers. We deeply explore the quenching mechanism and photoinhibition mechanism for light and matter co-confined multiphoton lithography. Besides, mathematical modeling helps us better understand that the synergy of quencher and photo-inhibition can gain a narrowest distribution of free radicals. By using light and matter co-confined multiphoton lithography, we gain a 30 nm critical dimension and 100 nm lateral resolution, which further decrease the gap with conventional lithography.
A highly effective and efficient cost-function-reduction method for inverse lithography technique

Jinyu Zhang,Wei Xiong,Yan, Wang,Zhiping Yu,Minchun Tsai

DOI: https://doi.org/10.1109/SISPAD.2008.4648286

2008-01-01

Abstract:An efficient algorithm based on the pixel-based mask representation is proposed for fast synthesis of model-based inverse lithography technology (ILT) to improve the resolution and pattern fidelity in optical lithography. This new algorithm uses perturbation method to reduce N-2 intensity computations to only three (3) equivalent intensity computations, where N2 is the total number of pixels in a mask. This algorithm has been demonstrated using different critical dimensions (CDs) and different mask technologies with incoherence and partial-coherence image systems. Good fidelity images are achieved when CD is reduced to 45nm.
Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

Zhen Geng,Zheng Shi,Xiao-Lang Yan,Kai-Sheng Luo,Wei-Wei Pan

DOI: https://doi.org/10.1007/s11390-015-1549-7

2015-01-01

Abstract:Inverse lithography technology (ILT) is one of the promising resolution enhancement techniques (RETs), as the advanced integrated circuits (IC) technology nodes still use the 193 nm light source. Among all the algorithms for ILT, the level-set-based ILT (LSB-ILT) is a feasible choice with good production result in practice. However, existing ILT algorithms optimize masks at nominal process condition without giving sufficient attention to the process variations, and thus the optimized masks show poor performance with focus and dose variations. In this paper, we put forward a new LSB-ILT algorithm for process robustness improvement with fast convergence. In order to account for the process variations in the optimization, we adopt a new form of the cost function by adding the objective function of process variation band (PV band) to the nominal cost. We also adopt the hybrid conjugate gradient (CG) method to reduce the runtime of the algorithm. We perform experiments on ICCAD 2013 benchmarks and the results show that our algorithm outperforms the top two winners of the ICCAD 2013 contest by 6.5%. We also adopt the attenuated phase shift mask (att-PSM) in the experiment with test cases from industry. The results show that our new algorithm has a fast convergence speed and reduces the process manufacturability index (PMI) by 38.77% compared with the LSB-ILT algorithm without the consideration of PV band.
GPU-accelerated Inverse Lithography Technique

Jinyu Zhang,Yangdong Deng,Wei Xiong,Yao Peng,Zhiping Yu

DOI: https://doi.org/10.1117/12.824276

2009-01-01

Abstract:The aim of this paper is to explore the use of the Graphic Processing Unit (GPU) for mask design using inverse lithography technique (ILT). We extend a newly proposed ILT algorithm called cost-function-reduction method (CFRM) to general partial-coherence image systems. To release heavy computational cost in this algorithm such as intensity computation, the algorithm is modified for GPU implementation. The scalability of the GPU implementation is demonstrated using different sizes of matrix in incoherence image system and partial-coherence image system. The total GPU optimization time for a 25μm×25μm mask in partial-coherence image model is about 8.2 second. About 15X performance increase have been achieved than that of an algorithm solely implemented on a high-end CPU. The maximum mask size is limited by GPU card memory.
Fast Convolution Method and Its Application in Mask Optimization for Intensity Calculation Using Basis Expansion

Yaping Sun,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/tip.2014.2360129

IF: 10.6

2014-01-01

IEEE Transactions on Image Processing

Abstract:Finer grid representation is required for a more accurate description of mask patterns in inverse lithography techniques, thus resulting in a large-size mask representation and heavy computational cost. To mitigate the computation problem caused by intensive convolutions in mask optimization, a new method called convolution using basis expansion (CBE) is discussed in this paper. Matrices defined in fine grid are projected on coarse gird under a base matrix set. The new matrices formed by the expansion coefficients are used to perform convolution on the coarse grid. The convolution on fine grid can be approximated by the sum of a few convolutions on coarse grid following an interpolation procedure. The CBE is verified by random matrix convolutions and intensity calculation in lithography simulation. Results show that the use of the CBE method results in similar image quality with significant running speed enhancement compared with traditional convolution method.
GPU-Accelerated Inverse Lithography Towards High Quality Curvy Mask Generation

Haoyu Yang,Haoxing Ren

2024-11-12

Abstract:Inverse Lithography Technology (ILT) has emerged as a promising solution for photo mask design and optimization. Relying on multi-beam mask writers, ILT enables the creation of free-form curvilinear mask shapes that enhance printed wafer image quality and process window. However, a major challenge in implementing curvilinear ILT for large-scale production is mask rule checking, an area currently under development by foundries and EDA vendors. Although recent research has incorporated mask complexity into the optimization process, much of it focuses on reducing e-beam shots, which does not align with the goals of curvilinear ILT. In this paper, we introduce a GPU-accelerated ILT algorithm that improves not only contour quality and process window but also the precision of curvilinear mask shapes. Our experiments on open benchmarks demonstrate a significant advantage of our algorithm over leading academic ILT engines.

Computer Vision and Pattern Recognition,Optics
Computational Lithography Using Machine Learning Models

Youngsoo Shin

DOI: https://doi.org/10.2197/ipsjtsldm.14.2

2021-01-01

IPSJ Transactions on System LSI Design Methodology

Abstract:Machine learning models have been applied to a wide range of computational lithography applications since around 2010. They provide higher modeling capability, so their application allows modeling of higher accuracy. Many applications which are computationally expensive can take advantage of machine learning models, since a well trained model provides a quick estimation of outcome. This tutorial reviews a number of such computational lithography applications that have been using machine learning models. They include mask optimization with OPC (optical proximity correction) and EPC (etch proximity correction), assist features insertion and their printability check, lithography modeling with optical model and resist model, test patterns, and hotspot detection and correction.
Inverse Lithography Physics-informed Deep Neural Level Set for Mask Optimization

Xing-Yu Ma,Shaogang Hao

DOI: https://doi.org/10.1364/AO.503332

2023-08-15

Abstract:As the feature size of integrated circuits continues to decrease, optical proximity correction (OPC) has emerged as a crucial resolution enhancement technology for ensuring high printability in the lithography process. Recently, level set-based inverse lithography technology (ILT) has drawn considerable attention as a promising OPC solution, showcasing its powerful pattern fidelity, especially in advanced process. However, massive computational time consumption of ILT limits its applicability to mainly correcting partial layers and hotspot regions. Deep learning (DL) methods have shown great potential in accelerating ILT. However, lack of domain knowledge of inverse lithography limits the ability of DL-based algorithms in process window (PW) enhancement and etc. In this paper, we propose an inverse lithography physics-informed deep neural level set (ILDLS) approach for mask optimization. This approach utilizes level set based-ILT as a layer within the DL framework and iteratively conducts mask prediction and correction to significantly enhance printability and PW in comparison with results from pure DL and ILT. With this approach, computation time is reduced by a few orders of magnitude versus ILT. By gearing up DL with knowledge of inverse lithography physics, ILDLS provides a new and efficient mask optimization solution.

Image and Video Processing,Hardware Architecture,Computer Vision and Pattern Recognition,Machine Learning
Optimal feature vector design for computational lithography

Xuelong Shi,Shoumian Cheng,Ming Li,Wei Yuan,Leon Yao,Wenhao Zhao,Yanjun Xiao,Xiaohui Kang,Angmar Li,Yuhang Zhao

DOI: https://doi.org/10.1117/12.2515446

2019-03-20

Abstract:With semiconductor technology progressing beyond 5nm node, there is tremendous pressure on computational lithography to achieve both accuracy and speed. One very promising technique to accomplish this mission is to take full advantage of the maturing machine learning techniques based on neural network architecture. Some success has been achieved using convolution neural network (CNN) to obtain inverse lithography technology (ILT) solution with significantly less computational time. In general, CNN architecture consists of feature extraction layers and nonlinear mapping function construction layers. To train a CNN model requires a large amount of data and computational resource. To maintain certain intrinsic symmetries of imaging behavior, the feature extraction layers must be carefully engineered using weight sharing techniques or using well balanced training samples of different orientations, otherwise, feature extraction part will be skewed. It is therefore very desired to have a scheme that can obtain optimal feature vector for machine learning based computational lithography automatically without the need of feature extraction layers in CNN. In this paper, we will make an attempt to describe such a scheme and present our test results on machine learning based OPC and ILT solution. It should be understood that machine learning based computational lithography solutions do not possess the capability to replace conventional OPC or ILT completely due to its lack of required accuracy. However, it can provide an initial solution that is close enough to final OPC solution or ILT solution, therefore fast OPC and fast ILT can be realized.
Generic Lithography Modeling with Dual-band Optics-Inspired Neural Networks

Haoyu Yang,Zongyi Li,Kumara Sastry,Saumyadip Mukhopadhyay,Mark Kilgard,Anima Anandkumar,Brucek Khailany,Vivek Singh,Haoxing Ren

DOI: https://doi.org/10.48550/arXiv.2203.08616

2022-03-12

Abstract:Lithography simulation is a critical step in VLSI design and optimization for manufacturability. Existing solutions for highly accurate lithography simulation with rigorous models are computationally expensive and slow, even when equipped with various approximation techniques. Recently, machine learning has provided alternative solutions for lithography simulation tasks such as coarse-grained edge placement error regression and complete contour prediction. However, the impact of these learning-based methods has been limited due to restrictive usage scenarios or low simulation accuracy. To tackle these concerns, we introduce an dual-band optics-inspired neural network design that considers the optical physics underlying lithography. To the best of our knowledge, our approach yields the first published via/metal layer contour simulation at 1nm^2/pixel resolution with any tile size. Compared to previous machine learning based solutions, we demonstrate that our framework can be trained much faster and offers a significant improvement on efficiency and image quality with 20X smaller model size. We also achieve 85X simulation speedup over traditional lithography simulator with 1% accuracy loss.

Other Computer Science,Machine Learning
Mask Synthesis for Aerial Image Fidelity in Optical Lithography Using A Coarse-Grid-Approximation Level-Set Approach

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1149/1.3567583

2011-01-01

ECS Transactions

Abstract:Inverse lithography technique, which treats mask synthesis as an inverse problem, has been considered as a strong contender to deal with the 45 nm technology node and beyond. But one problem exists in present pixel based mask synthesis algorithms: to describe mask patterns more accurately and to obtain better image quality, usually need finer grid representation, which results in extremely intensive computations. In this paper, a new method is proposed to mitigate this issue based on level-set method. This method utilizes the coarse-grid-approximation (CGA), which means the mask pattern defined on the fine grids is approximated using a new mask defined on coarse grids. The mask optimization is then performed on coarse girds and the final result is acquired by extracting mask patterns from coarse grids to fine grids. This method is demonstrated using a periodic array of contact holes pattern. Comparing with a gradient based algorithm and the traditional level-set algorithm, this method can provide almost the same image quality, but with over 100X running speed enhancement.
ILT Approach for Compensating 3-D Mask Effects

Xiong Wei,Zhang Jinyu,Min-Chun Tsai,Wang Yan,Yu Zhiping

DOI: https://doi.org/10.1016/s1007-0214(09)70009-4

2009-01-01

Abstract:As mask features scale to smaller dimensions, the so-called “3-D mask effects” which have mostly been neglected before, become important. This paper properly models the 3-D thick mask effects, and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results. Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94, and this approach gives improved accuracy and faster results than existing methods.
Regularized Level-Set-based Inverse Lithography Algorithm for IC Mask Synthesis

Zhen Geng,Zheng Shi,Xiao-lang Yan,Kai-sheng Luo

DOI: https://doi.org/10.1631/jzus.c1300050

2013-01-01

Abstract:Inverse lithography technology (ILT) is one of the promising resolution enhancement techniques, as the advanced IC technology nodes still use the 193 nm light source. In ILT, optical proximity correction (OPC) is treated as an inverse imaging problem to find the optimal solution using a set of mathematical approaches. Among all the algorithms for ILT, the level-set-based ILT (LSB-ILT) is a feasible choice with good production in practice. However, the manufacturability of the optimized mask is one of the critical issues in ILT; that is, the topology of its result is usually too complicated to manufacture. We put forward a new algorithm with high pattern fidelity called regularized LSB-ILT implemented in partially coherent illumination (PCI), which has the advantage of reducing mask complexity by suppressing the isolated irregular holes and protrusions in the edges generated in the optimization process. A new regularization term named the Laplacian term is also proposed in the regularized LSB-ILT optimization process to further reduce mask complexity in contrast with the total variation (TV) term. Experimental results show that the new algorithm with the Laplacian term can reduce the complexity of mask by over 40% compared with the ordinary LSB-ILT.
DMD maskless lithography optimization based on an improved genetic algorithm

Shengzhou Huang,Yuanzhuo Tang,Bowen Ren,Dongjie Wu,Jiani Pan,Zhaowei Tian,Chengwei Jiang,Zhi Li,Jinjin Huang

DOI: https://doi.org/10.35848/1347-4065/ad3282

IF: 1.5

2024-04-09

Japanese Journal of Applied Physics

Abstract:In this paper, we propose an effective method for optimizing mask design using an enhanced genetic algorithm (GA), significantly boosting digital micromirror device (DMD) maskless lithography performance. After a thorough evaluation of various optimization techniques, we determined that the simulated annealing-enhanced GA (SA-GA) offers superior improvements in lithography simulations, thus optimizing mask design more effectively. Our findings reveal that this method achieves up to 88% and 75% enhancement in simulation accuracy for circular and heart-shaped patterns, respectively, surpassing the results of conventional Hopkins lithography simulations. The remarkable effect of improved GA in enhancing the quality of DMD digital lithography shows that it will have great potential in micro-fabrication applications, and paves the way for the realization of high-fidelity and efficient DMD digital lithography technology, which has excellent versatility and adaptability in the field of microelectronics manufacturing.

physics, applied
Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)

Jinyu Zhang,Wei Xiong,Min-Chun Tsai,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1007/978-3-211-72861-1_12

2007-01-01

Abstract:An efficient algorithm is proposed for fast synthesis of low complexity model-based inverse lithography technology (ILT) and phase shift masks (PSM) to improve the resolution and pattern fidelity in optical micro lithography. The patterns on the mask are transformed into frequency space using 2D discrete cosine transformation (DCT). The solution space is thus changed to frequency space from real space. By cutting off high frequency components in DC spectrum, the dimension of the solution space is greatly reduced. Using a gradient-based algorithm, we solve the inverse problem in incoherent and partial coherent imaging systems with binary, 6%EPSM and APSM mask. Good fidelity images are achieved.
A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

Jinyu Zhang,Wei Xiong,Yan Wang,Zhiping Yu,Min-Chun Tsai

DOI: https://doi.org/10.1145/1509456.1509565

2008-01-01

Abstract:An efficient algorithm based on the pixel-based mask representation is proposed for fast synthesis of model-based inverse lithography technology (ILT) to improve the resolution and pattern fidelity in optical lithography. This new algorithm reduces N2 intensity computations to three (3) equivalent intensity computations per iteration, where N2 is the total number of pixels in a mask. This algorithm has been demonstrated using different critical dimensions (CDs) and different mask technologies with incoherence and partial-coherence image models. This algorithm is about 60 times faster and more effective than the current gradient-based algorithm. The final image fidelity has quite a weak dependence on the initial condition. Good fidelity images are achieved when CD is reduced to 45nm.
LithoBench: Benchmarking AI Computational Lithography for Semiconductor Manufacturing

Bei Yu,Haoyu Yang,Martin D. F. Wong,Su Zheng,Binwu Zhu

Abstract:Computational lithography provides algorithmic and mathematical support for resolution enhancement in optical lithography, which is critical for semiconductor manufacturing. The time-consuming lithography simulation and mask optimization processes limit the practical application of inverse lithography technology (ILT), a promising solution to the challenges of advanced-node lithography. Although machine learning for ILT has shown promise for reducing the computational burden, this ﬁeld lacks a dataset that can train the models thoroughly and evaluate the performance comprehensively. To boost the development of AI-driven computational lithography, we present the LithoBench dataset, a collection of circuit layout tiles for deep-learning-based lithography simulation and mask optimization. LithoBench consists of more than 120k tiles that are cropped from real circuit designs or synthesized according to topologies of widely adopted ILT testcases. Ground truths are generated by a famous lithography model in academia and an advanced ILT method. We provide a framework to design and evaluate deep neural networks (DNNs) with the data. The framework is used to benchmark state-of-the-art models on lithography simulation and mask optimization. LithoBench is available at https://github.com/shelljane/lithobench .

Computer Science,Engineering
Deep Learning for Mask Synthesis and Verification: A Survey.

Yibo Lin

DOI: https://doi.org/10.1145/3394885.3431624

2021-01-01

Abstract:Achieving lithography compliance is increasingly difficult in advanced technology nodes. Due to complicated lithography modeling and long simulation cycles, verifying and optimizing photomasks becomes extremely expensive. To speedup design closure, deep learning techniques have been introduced to enable data-assisted optimization and verification. Such approaches have demonstrated promising results with high solution quality and efficiency. Recent research efforts show that learning-based techniques can accomplish more and more tasks, from classification, simulation, to optimization, etc. In this paper, we will survey the successful attempts of advancing mask synthesis and verification with deep learning and highlight the domain-specific learning techniques. We hope this survey can shed light on the future development of learning-based design automation methodologies.
A New Algorithm of Inverse Lithography Technology for Mask Complexity Reduction

Li Yanghuan,Shi Zheng,Geng Zhen,Yang Yiwei,Yan Xiaolang

DOI: https://doi.org/10.1088/1674-4926/33/4/045009

2012-01-01

Journal of Semiconductors

Abstract:A new complexity penalty term called the global wavelet penalty is introduced, which evaluates the high-frequency components of masks more profoundly by applying four distinctive Haar wavelet transforms and choosing the optimal direction on which the highest frequency components of the mask will be removed. Then, a new gradient-based inverse lithography technology (ILT) algorithm is proposed, with the computation of the global wavelet penalty as the emphasis of its first phase for mask complexity reduction. Experiments with three typical 65 nm flash ROM patterns under existing 90 nm lithographic conditions show that compared with the gradientbased algorithm, which relies on the so-called local wavelet penalty, the total vertices of the three results created by the proposed algorithm can be reduced by 12.89%, 12.63% and 12.64%, respectively, while the accuracy of the lithography results remains the same.

LIC-CGAN: fast lithography latent images calculation method for large-area masks using deep learning

LithoGAN

Light and Matter Co-Confined Multi-Photon Lithography

A highly effective and efficient cost-function-reduction method for inverse lithography technique

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

GPU-accelerated Inverse Lithography Technique

Fast Convolution Method and Its Application in Mask Optimization for Intensity Calculation Using Basis Expansion

GPU-Accelerated Inverse Lithography Towards High Quality Curvy Mask Generation

Computational Lithography Using Machine Learning Models

Inverse Lithography Physics-informed Deep Neural Level Set for Mask Optimization

Optimal feature vector design for computational lithography

Generic Lithography Modeling with Dual-band Optics-Inspired Neural Networks

Mask Synthesis for Aerial Image Fidelity in Optical Lithography Using A Coarse-Grid-Approximation Level-Set Approach

ILT Approach for Compensating 3-D Mask Effects

Regularized Level-Set-based Inverse Lithography Algorithm for IC Mask Synthesis

DMD maskless lithography optimization based on an improved genetic algorithm

Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)

A highly efficient optimization algorithm for pixel manipulation in inverse lithography technique

LithoBench: Benchmarking AI Computational Lithography for Semiconductor Manufacturing

Deep Learning for Mask Synthesis and Verification: A Survey.

A New Algorithm of Inverse Lithography Technology for Mask Complexity Reduction