Abstract:The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp2 orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.

Isomerization change and charge trap double mechanisms induced ternary data storage performance

Zinc Ion Triggered Controllable Binary/Ternary Memory Conversion Behaviors in Polyimides Containing Pendant Porphyrin Group

Rational Design of Quinoline-based D-A System to Accomplish a Switching from Binary to Ternary Memory Devices

All-Round Enhancement in Zn-Ion Storage Enabled by Solvent-Guided Lewis Acid-Base Self-Assembly of Heterodiatomic Carbon Nanotubes.

Negative effect on molecular planarity to achieve organic ternary memory: triphenylamine as the spacer

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Nonvolatile organic field-effect transistor memory from pyrene-fused azaindacene regioisomers

Study of Electronic and Steric Effects of Different Substituents in Donor–Acceptor Molecules on Multilevel Organic Memory Data Storage Performance

Two-stage Optical Recording: Photoinduced Birefringence and Surface-Mediated Bits Storage in Bisazo-Containing Copolymers Towards Ultrahigh Data Memory

Study of an interesting physical mechanism of memory effect in nematic liquid crystal dispersed with quantum dots

Comprehensive understanding of the structure-stacking property correlation to achieve high-performance ternary data-storage devices

Charge Trapping at Organic/Self-Assembly Molecule Interfaces Studied by Electrical Switching Behaviour in A Crosspoint Structure

Nunchaku-Like Molecules Containing Both an Azo Chromophore and A Biphenylene Unit As A New Type of High-Sensitivity Photo-Storage Material

Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Trap-Assisted Charge Storage in Titania Nanocrystals Toward Optoelectronic Nonvolatile Memory.

Charge-Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C–H...N Interaction and Anion Radicals for Stable ReRAM Performance