Abstract:Recently there has been tremendous interest in molecular‐switch‐embedded memory devices. However, achieving a substantial memory window and prolonged retention time remains a challenge. The diazirine‐anchored DAE linker (DL2) offers promise with a milder photocrosslinking process, leading to improved performance. When combined with F8T2, it results in FETs with a 22 V memory window, over 106 s of retention time, a significant ON/OFF ratio, and robust stability. Over the past decade, molecular‐switch‐embedded memory devices, particularly field‐effect transistors (FETs), have gained significant interest. Molecular switches are integrated to regulate the resistance or current levels in FETs. Despite substantial efforts, realizing large memory window with a long retention time, a critical factor in memory device functionality, remains a challenge. This is due to the inability of an isomeric state of a molecular switch to serve as a stable deep trap state within the semiconductor layer. Herein, the study addresses this limitation by introducing chemical bonding between molecular switch and conjugated polymeric semiconductor, facilitating closed isomer of diarylethene (DAE) to operate as a morphologically stable deep trap state. Azide‐ and diazirine‐anchored DAEs are synthesized, which form chemical bonds to the polymer through photocrosslinking, thereby implementing permanent and controllable trapping states nearby conjugated backbone of polymer semiconductor. Consequently, when diazirine‐anchored DAE is blended with F8T2 and subjected to photocrosslinking, the resulting organic FETs exhibit remarkable memory performance, including a memory window of 22 V with a retention time over 106 s, a high photoprogrammable on/off ratio over 103, and a high operational stability over 100 photocycles. Further, photophore‐anchored DAEs can achieve precise patterning, which enables meticulous control over the semiconductor layer structure.

Controllable binary/ternary memory behavior induced by isomerization of phenylhydrazone groups in polymer side chains under ultraviolet light conditions

Multicolor Zinc(II)‐Coordinated Hydrazone‐Based Bistable Photoswitches for Rewritable Transparent Luminescent Labels

Zinc Ion Triggered Controllable Binary/Ternary Memory Conversion Behaviors in Polyimides Containing Pendant Porphyrin Group

Conjugated polymers with cationic iridium(iii) complexes in the side-chain for flash memory devices utilizing switchable through-space charge transfer

Flash‐Memory Effect for Polyfluorenes with On‐Chain Iridium(III) Complexes

Photo/mechanical/acidic multi‐stimuli responses and information encryption design of acylhydrazone derivative

Synthesis of tetraphenylphosphonium/polysulfide hybrids and their temperature-induced switchable WORM/flash electrical memory behavior

Dynamic Metal-ligand Coordination for Fluorescence Color Regulation of Hydrazone-based Bistable Photoswitches.

Nonvolatile Write-Once Read-Many-Times Memory Behaviors Of Polyimides Containing Tetraphenyl Fluorene Core And The Pendant Triphenylamine Or Carbazole Moieties

An Electrogenerated Chemical-Oxidation-Driving Nonvolatile Plastic Memory Device with the Conjugated Polymer/Carbon Nanotube Blend

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups

Switching the memory behaviour from binary to ternary by triggering S62− relaxation in polysulfide-bearing zinc–organic complex molecular memories

Photophore‐Anchored Molecular Switch for High‐Performance Nonvolatile Organic Memory Transistor

Multilevel Conductance Switching of Memory Device Through Photoelectric Effect.

Solid-State Thermal Memory of Temperature-Responsive Polymer Induced by Hydrogen Bonds

Simultaneous Incorporation of Two Types of Azo‐Groups in the Side Chains of a Conjugated D–A Polymer for Logic Control of the Semiconducting Performance by Light Irradiation

Conductance Quantization in A Ag Filament-Based Polymer Resistive Memory

Photodynamic Pattern Memory Surfaces with Responsive Wrinkled and Fluorescent Patterns

Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate

Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity