Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C–H...N Interaction and Anion Radicals for Stable ReRAM Performance
Junyu Shen,Fei Xue,Guan Wang,Yang Li,Huilong Dong,Qijian Zhang
DOI: https://doi.org/10.1021/acsami.1c23654
2022-02-02
Abstract:The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, <b>2-DPTZ</b> and <b>4-DPTZ</b>, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp<sup>2</sup> orbital, <b>2-DPTZ</b> and <b>4-DPTZ</b> compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/<b>2-DPTZ</b> or <b>4-DPTZ</b>/Al memory devices both showed binary memory characteristics, with <b>2-DPTZ</b> based memory devices showing the write once read many times (WORM) memory behavior and <b>4-DPTZ</b> based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of <b>2-DPTZ</b> and <b>4-DPTZ</b> films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of <b>2-DPTZ</b> and <b>4-DPTZ</b> to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.
materials science, multidisciplinary,nanoscience & nanotechnology