Abstract:Photomemristors have been regarded as one of the most promising candidates for next-generation hardware-based neuromorphic computing due to their potentials of fast data transmission and low power consumption. However, intriguingly, so far, photomemristors seldom display truly nonvolatile memory characteristics with high light sensitivity. Herein, we demonstrate ultrasensitive photomemristors utilizing two-dimensional (2D) Ruddlesden-Popper (RP) perovskites with a highly polar donor-acceptor-type push-pull organic cation, 4-(5-(2-aminoethyl)thiophen-2-yl)benzonitrile+ (EATPCN+), as charge-trapping layers. High linearity and almost zero-decay retention are observed in (EATPCN)2PbI4 devices, which are very distinct from that of the traditional 2D RP perovskite devices consisting of nonpolar organic cations, such as phenethylamine+ (PEA+) and octylamine+ (OA+), and traditional 3D perovskite devices consisting of methylamine+ (MA+). The 2-fold advantages, including desirable spatial crystal arrangement and engineered energetic band alignment, clarify the mechanism of superior performance in (EATPCN)2PbI4 devices. The optimized (EATPCN)2PbI4 photomemristor also shows a memory window of 87.9 V and an on/off ratio of 106 with a retention time of at least 2.4 × 105 s and remains unchanged after >105 writing-reading-erasing-reading endurance cycles. Very low energy consumptions of 1.12 and 6 fJ for both light stimulation and the reading process of each status update are also demonstrated. The extremely low power consumption and high photoresponsivity were simultaneously achieved. The high photosensitivity surpasses that of a state-of-the-art commercial pulse energy meter by several orders of magnitude. With their outstanding linearity and retention, rabbit images have been rebuilt by (EATPCN)2PbI4 photomemristors, which truthfully render the image without fading over time. Finally, by utilizing the powerful ∼8 bits of nonvolatile potentiation and depression levels of (EATPCN)2PbI4 photomemristors, the accuracies of the recognition tasks of CIFAR-10 image classification and MNIST handwritten digit classification have reached 89% and 94.8%, respectively. This study represents the first report of utilizing a functional donor-acceptor type of organic cation in 2D RP perovskites for high-performance photomemristors with characteristics that are not found in current halide perovskites.

Bias-tunable persistent photoconductivity for photoelectric memory in van der Waals heterojunctions of black phosphorus/2D electron gas on SrTiO 3

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

Negative Photoconductance in Van Der Waals Heterostructure-Based Floating Gate Phototransistor

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

Photoinduced Multi-Bit Nonvolatile Memory Based on a Van Der Waals Heterostructure with a 2D-Perovskite Floating Gate.

Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS$_2$ Heterostructure

Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate

Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite

Chargeable photoconductivity in Van der Waals heterojunctions

Polarization‐Resolved Broadband MoS 2 /Black Phosphorus/MoS 2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device.

High-bandwidth Light Inputting Multilevel Photoelectric Memory Based on Thin-Film Transistor with a Floating Gate of CsPbBr3/CsPbI3 Blend Quantum Dots

Coexistence of Photoelectric Conversion and Storage in van der Waals Heterojunctions

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric p-n Heterojunctions

A Multistate Non-Volatile Photoelectronic Memory Device Based on Ferroelectric Tunnel Junction with Modulable Visible Light Photoresponse

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric Heterojunctions

Photoinduced Nonvolatile Memory Transistor Based on Lead‐Free Perovskite Incorporating Fused Π‐Conjugated Organic Ligands

Selective Enhancement of Photoresponse with Ferroelectric‐Controlled BP/In2Se3 Vdw Heterojunction

Harnessing 2D Ruddlesden-Popper Perovskite with Polar Organic Cation for Ultrasensitive Multibit Nonvolatile Transistor-Type Photomemristors

Optoelectrical Switching of Nonfullerene Acceptor Y6 and BPQD‐Based Bulk Heterojunction Memory Device through Photoelectric Effect

Non-volatile optoelectronic memory based on a photosensitive dielectric