Attention changes local brain activity.

P. Stern

DOI: https://doi.org/10.1126/science.354.6316.1114-m

IF: 56.9

2016-12-02

Science

Abstract:Neuroscience There is a well-known correlation between arousal and neuronal activity in the brain. However, it is unclear how these general effects are reflected on a local scale. Engel et al. recorded from higher visual areas in behaving monkeys and discovered a new principle of cortical state

What problem does this paper attempt to address?

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric Heterojunctions

Yucheng Jiang,Xinglong Ma,Lin Wang,Jinlei Zhang,Zhichao Wang,Run Zhao,Guozhen Liu,Yang Li,Cheng Zhang,Chunlan Ma,Yaping Qi,Lin Wu,and Ju Gao

DOI: https://doi.org/10.1103/physrevlett.130.196801

IF: 8.6

2023-05-10

Physical Review Letters

Abstract:The switchable electric polarization is usually achieved in ferroelectric materials with noncentrosymmetric structures, which opens exciting opportunities for information storage and neuromorphic computing. In another polar system of p−n junction, there exists the electric polarization at the interface due to the Fermi level misalignment. However, the resultant built-in electric field is unavailable to manipulate, thus attracting less attention for memory devices. Here, we report the interfacial polarization hysteresis (IPH) in the vertical sidewall van der Waals heterojunctions of black phosphorus and quasi-two-dimensional electron gas on SrTiO3 . A nonvolatile switching of electric polarization can be achieved by reconstructing the space charge region (SCR) with long-lifetime nonequilibrium carriers. The resulting electric-field controllable IPH is experimentally verified by electric hysteresis, polarization oscillation, and pyroelectric effect. Further studies confirm the transition temperature of 340 K, beyond which the IPH vanishes. The second transition is revealed with the temperature dropping below 230 K, corresponding to the sharp improvement of IPH and the freezing of SCR reconstruction. This work offers new possibilities for exploring the memory phenomena in nonferroelectric p−n heterojunctions. https://doi.org/10.1103/PhysRevLett.130.196801 © 2023 American Physical Society

physics, multidisciplinary
Hysteresis Related to Ion Migration Rather Than Ferroelectric Polarization in MAPbI3

Yihui Zou,Yi Ding,Haihua Hu,Jingji Zhang,Huilin Li,Ping Lin,Peng Wang,Xiaoping Wu,Lingbo Xu,Can Cui

DOI: https://doi.org/10.1063/5.0222917

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Understanding ferroelectric characteristic is crucial, especially for elucidating the existence of ferroelectric and its relationship with hysteresis in hybrid organic–inorganic perovskites. Our focus is to evaluate the ferroelectric properties of MAPbI3 perovskite films by suppressing the rotation of the MA+ ions through the substitution of TMA+ cations. Our findings indicate that both MAPbI3 and MA0.85TMA0.15PbI3 exhibit non-ferroelectric properties at room temperature, which persist even after external polarization treatment. Further analysis reveals that the hysteresis in J–V characteristics is associated with ion migration phenomena. The external polarization treatment aids in releasing electrons from defect states, enabling them to revert to their original lattice sites. As a result, devices subjected to polarization treatment exhibit reduced hysteresis and enhanced photovoltaic performance.
Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

Piush Behera,Eric Parsonnet,Fernando Gomez-Ortiz,Vishantak Srikrishna,Peter Meisenheimer,Sandhya Susarla,Pravin Kavle,Lucas Caretta,Yongjun Wu,Zishen Tian,Abel Fernandez,Lane W. Martin,Sujit Das,Javier Junquera,Zijian Hong,Ramamoorthy Ramesh

DOI: https://doi.org/10.1002/adma.202208367

IF: 29.4

2023-01-01

Advanced Materials

Abstract:Topologically protected polar textures have provided a rich playground for the exploration of novel, emergent phenomena. Recent discoveries indicate that ferroelectric vortices and skyrmions not only host properties markedly different from traditional ferroelectrics, but also that these properties can be harnessed for unique memory devices. Using a combination of capacitor-based capacitance measurements and computational models, it is demonstrated that polar vortices in dielectric-ferroelectric-dielectric trilayers exhibit classical ferroelectric bi-stability together with the existence of low-field metastable polarization states. This behavior is directly tied to the in-plane vortex ordering, and it is shown that it can be used as a new method of non-destructive readout-out of the poled state.
Multilevel hysteresis loop engineered with ferroelectric nano-metamaterials

Le Van Lich,Takahiro Shimada,Shahmohammadi Sepideh,Jie Wang,Takayuki Kitamura

DOI: https://doi.org/10.1016/j.actamat.2016.11.065

IF: 9.4

2017-01-01

Acta Materialia

Abstract:Polarization switching in ferroelectric and multiferroic materials provides a means of designing a broad range of multifunctional devices. To date, such applications have typically exploited 180° ferroelectric polarization switching, where the polarization vector can be alternated between parallel or anti-parallel to the external electric field, i.e., bi-states. However, the coupling between the direction of switching and the long-range order parameter puts a limit on the well-defined polarization state, hindering the use of polarization switching and the advancement of novel applications. Using the ferroelectric nano-metamaterial concept, we demonstrate here that successive polarization switching through multiple well-defined stable states with a long-range order parameter decoupled from the direction of switching can be achieved, and consequently, controllable and multilevel hysteresis loops are obtained under a unidirectional electric field. The equilibrium polarization configuration of stable states are tailored by designing a nanoporous ferroelectric structure based on the ferroelectric nano-metamaterial concept. The orientation of the homogeneous electric field is then controlled to achieve the desired polarization switching behavior and hence the hysteresis loop level, which can pass through all stable polarization states. In addition, a general rule for the nanostructure-state-level of switching is established, from which a high level of hysteresis loop can be designed and achieved. The present study provides a foundation for novel devices based on multilevel ferroelectric switching, such as multilevel data storage memory, multi-logic gates, and electromechanical devices with multilevel control.
Electrical Switching Behavior from All-Polymer-Based System of Semiconductor/Ferroelectrics/Semiconductor

Yun Li,Chuan Liu,Lijia Pan,Lin Pu,Henning Sirringhaus,Yi Shi

DOI: https://doi.org/10.1063/1.3584854

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Ferroelectricity is attractive in data storage application as the polarizations can be used as binary levels. However, conductivity and ferroelectricity cannot be tuned independently in inorganic materials, thus two-terminal resistive memories with ferroelectrics are yet to be achieved. Here, we present an all-polymer-based system of semiconductor/ferroelectrics/semiconductor. Electrical switching behavior, which is critical to resistive memories, is observed. The mechanism of the conduction transition is attributed to the transmission probability of charge carriers tuned by electrical polarization. The importance of polarization in controlling the charge transport deserves further investigation for the realization and optimization of the two-terminal resistive memories with ferroelectrics.
Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene Fluoride)-Based Flexible Nanocomposites

Yao Wang,Chen Huang,Ziwei Cheng,Zhenghao Liu,Yuan Zhang,Yantao Zheng,Shulin Chen,Jie Wang,Peng Gao,Yang Shen,Chungang Duan,Yuan Deng,Ce-Wen Nan,Jiangyu Li

DOI: https://doi.org/10.1038/s41467-024-48348-4

IF: 16.6

2024-01-01

Nature Communications

Abstract:AbstractFerroelectric materials have important applications in transduction, data storage, and nonlinear optics. Inorganic ferroelectrics such as lead zirconate titanate possess large polarization, though they are rigid and brittle. Ferroelectric polymers are light weight and flexible, yet their polarization is low, bottlenecked at 10 μC cm−2. Here we show poly(vinylidene fluoride) nanocomposite with only 0.94% of self-nucleated CH3NH3PbBr3 nanocrystals exhibits anomalously large polarization (~19.6 μC cm−2) while retaining superior stretchability and photoluminance, resulting in unprecedented electromechanical figures of merit among ferroelectrics. Comprehensive analysis suggests the enhancement is accomplished via delicate defect engineering, with field-induced Frenkel pairs in halide perovskite stabilized by the poled ferroelectric polymer through interfacial coupling. The strategy is general, working in poly(vinylidene fluoride-co-hexafluoropropylene) as well, and the nanocomposite is stable. The study thus presents a solution for overcoming the electromechanical dilemma of ferroelectrics while enabling additional optic-activity, ideal for multifunctional flexible electronics applications.
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

H. Wang,Z. R. Liu,H. Y. Yoong,T. R. Paudel,J. X. Xiao,R. Guo,W. N. Lin,P. Yang,J. Wang,G. M. Chow,T. Venkatesan,E. Y. Tsymbal,H. Tian,J. S. Chen

DOI: https://doi.org/10.1038/s41467-018-05662-y

IF: 16.6

2018-01-01

Nature Communications

Abstract:Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is required to miniaturize electronic devices. Direct visualization of stable ferroelectric polarization and its switching behavior in atomically thick films is critical for achieving this goal. Here, ferroelectric order at room temperature in the two-dimensional limit is demonstrated in tetragonal BiFeO 3 ultrathin films. Using aberration-corrected scanning transmission electron microscopy, we directly observed robust out-of-plane spontaneous polarization in one-unit-cell-thick BiFeO 3 films. High-resolution piezoresponse force microscopy measurements show that the polarization is stable and switchable, whereas a tunneling electroresistance effect of up to 370% is achieved in BiFeO 3 films. Based on first-principles calculations and Kelvin probe force microscopy measurements, we explain the mechanism of polarization stabilization by the ionic displacements in oxide electrode and the surface charges. Our results indicate that critical thickness for ferroelectricity in the BiFeO 3 film is virtually absent, making it a promising candidate for high-density nonvolatile memories.
Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Yong Zhou,Ke Xiong,Shuyu Wu,Luqi Tu,Xudong Wang,Yan Chen,Shuaiqin Wu,Jinhua Zeng,Yuqing Zheng,Shiqun Gu,Man Luo,Tie Lin,Hong Shen,Xiangjian Meng,Qi Liu,Junhao Chu,Jianlu Wang

DOI: https://doi.org/10.1016/j.mtphys.2024.101414

IF: 11.021

2024-04-01

Materials Today Physics

Abstract:Hafnia-based oxide thin films exhibit unconventional robust ferroelectricity at the nanoscale, paving the way for advancements in next-generation nanoelectronics. However, the stability and dynamics of ferroelectric polarization in hafnia-based oxides films, particularly at the nanoscale, warrant further exploration. In this study, we delve into the factors influencing the formation of the ferroelectric phase. Our findings illuminate that the confinement effect of the capped layer enhances the stabilization of the metastable orthorhombic phase, thereby bolstering its ferroelectricity and endurance. Furthermore, we identify an unprecedented polarization-switching behavior in HfO2-based ferroelectric films, characterized by a decrease in the remanent polarization and an increase in the coercive field as the temperature drops. This peculiar phenomenon can be ascribed to the reduction in the long-range interaction of polarization dipoles upon cooling, as evidenced by the dielectric spectrum. The diminished long-range interaction results in the emergence of nanodomains and a re-entrant relaxer behavior, offering novel insights into the origin of ferroelectricity and the stability of ferroelectric polarization in hafnia-based thin films. Given the commendable compatibility of Hf0.5Zr0.5O2 films with Si substrates and a pyroelectric coefficient of −62.1 μC/m2·K, they emerge as a prime candidate for sensor device applications.

materials science, multidisciplinary,physics, applied
Ultralow-pressure-driven Polarization Switching in Ferroelectric Membranes

Xinrui Yang,Lu Han,Hongkai Ning,Shaoqing Xu,Bo Hao,Yi-Chi Li,Taotao Li,Yuan Gao,Shengjun Yan,Yueying Li,Chenyi Gu,Weisheng Li,Zhengbin Gu,Yingzhuo Lun,Yi Shi,Jian Zhou,Jiawang Hong,Xinran Wang,Di Wu,Yuefeng Nie

DOI: https://doi.org/10.1038/s41467-024-53436-6

IF: 16.6

2024-01-01

Nature Communications

Abstract:Van der Waals integration of freestanding perovskite-oxide membranes with two-dimensional semiconductors has emerged as a promising strategy for developing high-performance electronics, such as field-effect transistors. In these innovative field-effect transistors, the oxide membranes have primarily functioned as dielectric layers, yet their great potential for structural tunability remains largely untapped. Free of epitaxial constraints by the substrate, these freestanding membranes exhibit remarkable structural tunability, providing a unique material system to achieve huge strain gradients and pronounced flexoelectric effects. Here, by harnessing the excellent structural tunability of PbTiO3 membranes and modulating the underlying substrate’s elasticity, we demonstrate the tip-pressure-induced polarization switching with an ultralow pressure (down to 0.06 GPa). Moreover, as an application demonstration, we develop a prototype non-volatile ferroelectric field-effect transistor integrated on silicon that can be operated mechanically and electrically. Our findings underscore the great potential of oxide membranes for utilization in advanced non-volatile electronics and highly sensitive pressure sensors. The authors realize low-pressure-driven polarization switching in PbTiO3 membranes by leveraging their structural tunability and substrate elasticity, enabling ferroelectric field-effect transistors on silicon, operatable mechanically and electrically.
Electro and Photon Double-Driven Non-Volatile and Non-Destructive Readout Memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 Heterostructures

Maocai Wei,Meifeng Liu,Lun Yang,Bo Xie,Xiang Li,Xiuzhang Wang,Xiangyang Cheng,Yongdan Zhu,Zijiong Li,Yuling Su,Meiya Li,Zhongqiang Hu,Jun-Ming Liu

DOI: https://doi.org/10.1016/j.ceramint.2019.10.256

IF: 5.532

2019-01-01

Ceramics International

Abstract:Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi0.9Eu0.1FeO3 (BEFO) /Nb-doped SrTiO3 (NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory.
Ultrafast Photocurrent Hysteresis in Photoferroelectric α-In2Se3

Zhen Lei,Jiawei Chang,Qiyi Zhao,Jian Zhou,Yuanyuan Huang,Qihua Xiong,Xinlong Xu

2024-05-01

Abstract:The photon-electron interactions are generally volatile and the intricate multiphysics details of photoexcited carrier dynamics are not yet distinguished. How to nonvolatile control the physical state through all-optical means and clarify the intricate physical processes has been a long-term goal pursued in polar materials. Photoferroelectric {\alpha}-In2Se3 holds the great potential for capturing multimodal nonvolatile states due to the spontaneous reversible in-plane and out-of-plane polarizations and its tunable light-matter interactions arising from the electronic degree of freedom. Here we uncover a nonvolatile zero-bias ultrafast photocurrent hysteresis response with an all-optical scheme, diagnosed by in-plane and out-of-plane terahertz waves emitted from the photoferroelectric {\alpha}-In2Se3. The mechanism of such ultrafast photocurrent hysteresis emerges as a result of anomalous bulk linear and circular photovoltaic effect synchronously driven by local polarization rearrangement. Utilizing anisotropic ferroelectric kinetics-induced relative phase between the in-plane and out-of-plane directions, we further show flexibly selective chirality, tunable rotational angle, and optimizable ellipticity of terahertz wave polarizations. Our finding offers a promising avenue towards direct ultrafast nonvolatile processing of photocurrent signals through an all-optical scheme.

Optics
Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

Haojie Xu,Fapeng Sun,Enlong Li,Wuqian Guo,Lina Hua,Ruixue Wang,Wenwu Li,Junhao Chu,Wei Liu,Junhua Luo,Zhihua Sun

DOI: https://doi.org/10.1002/adma.202414339

2024-01-01

Abstract:Ferroelectric materials commonly serve as gate insulators in typical field-effect transistors, where their polarization reversal enables effective modulation of the conductivity state of the channel material, thereby realizing non-volatile memory. Currently, novel 2D ferroelectrics unlock new prospects in next-generation electronics and neuromorphic computation. However, the advancement of these materials is impeded by limited selectivity and narrow memory windows. Here, new concepts of 2D ferroelectric perovskite/MoS2 channel heterostructures field-effect transistors are presented, in which 2D ferroelectric perovskite features customizable band structure, few-layered ferroelectricity, and submillimeter-size monolayer wafers. Further studies reveal that these devices exhibit unique charge polarity modulation (from n- to p-type channel) and remarkable nonvolatile memory behavior, especially record-wide hysteresis windows up to 177 V, which enables efficient imitation of biological synapses and achieves high recognition accuracy for electrocardiogram patterns. This result provides a device paradigm for future nonvolatile memory and artificial synaptic applications.
[Problem of acquired toxoplasmosis during malignant diseases].

J. Escande

Abstract:
Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns

Shuaiqin Wu,Jie Deng,Xudong Wang,Jing Zhou,Hanxue Jiao,Qianru Zhao,Tie Lin,Hong Shen,Xiangjian Meng,Yan Chen,Junhao Chu,Jianlu Wang

DOI: https://doi.org/10.1038/s41467-024-52877-3

2024-10-09

Abstract:Advances in symmetry-breaking engineering of heterointerfaces for optoelectronic devices have garnered significant attention due to their immense potential in tunable moiré quantum geometry and enabling polarization light detection. Despite several proposed approaches to breaking the symmetry of low-dimensional materials, there remains a lack of universal methods to create materials with prominent polarization detection capabilities. Here, we introduce a reliable strategy for manipulating the symmetry of low-dimensional materials through a programmable ferroelectric-doping patterns technique. This method introduces a spontaneous photocurrent and enables the detection of linearly polarization light in isotropic 2H-MoTe2. The 2H-MoTe2 photodetector exhibits a significant short-circuit photocurrent intensity (Jsc = 29.9 A/cm2) and open-circuit voltage Voc of 0.12 V ( ~ 3 × 105 V/cm). Under a specific bias, the polarization ratio transitions from 1 to ∞/-∞, shifting from a positive state (unipolar regime) to a negative state (bipolar regime). These findings underscore the potential of ferroelectric-doping patterns as a promising approach to creating composite materials with artificial bulk photovoltaic effect and achieving high-performance polarization light detection.
Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories

Mohamed Belmoubarik,Muftah Al-Mahdawi,George Machado,Tomohiro Nozaki,Cláudia Coelho,Masashi Sahashi,Weng Kung Peng

DOI: https://doi.org/10.1007/s10854-024-12195-2

2024-03-02

Journal of Materials Science Materials in Electronics

Abstract:Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied several times in perovskite and complicated materials systems. It was interpreted as the modulation of carrier transport by polarization control over Schottky barriers. Here, we experimentally report the isothermal resistive switching across a CoPt/MgZnO Schottky barrier using a simple binary semiconductor. The crystal and texture properties showed high-quality and single-crystal Co 0.30 Pt 0.70 /Mg 0.20 Zn 0.80 O hetero-junctions. The resistive switching was examined by an electric-field cooling method that exhibited a ferroelectric Curie temperature of MgZnO close to the bulk value. The resistive switching across CoPt/MgZnO Schottky barrier was accompanied by a change in the Schottky barrier height of 26.5 meV due to an interfacial charge increase and/or orbital hybridization induced partial reversal of the MgZnO polarization. The magnitude of the reversed polarization was estimated to be a reasonable value of 3.0 (8.25) μC/cm 2 at 300 K (2 K). These findings demonstrated the utilities of CoPt/MgZnO interface as a potential candidate for ferroelectric memristors and advanced spintronics applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories

Mohamed Belmoubarik,Muftah Al-Mahdawi,George Machado Jr.,Tomohiro Nozaki,Cláudia Coelho,Masashi Sahashi,Weng Kung Peng

2024-03-01

Abstract:Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied several times in perovskite and complicated materials systems. It was interpreted as the modulation of carrier transport by polarization control over Schottky barriers. Here, we experimentally report the isothermal resistive switching across a CoPt/MgZnO Schottky barrier using a simple binary semiconductor. The crystal and texture properties showed high-quality and single-crystal Co$_{0.30}$Pt$_{0.70}$/Mg$_{0.20}$Zn$_{0.80}$O hetero-junctions. The resistive switching was examined by an electric-field cooling method that exhibited a ferroelectric T$_C$ of MgZnO close to the bulk value. The resistive switching across CoPt/MgZnO Schottky barrier was accompanied by a change in the Schottky barrier height of 26.5 meV due to an interfacial charge increase and/or orbital hybridization induced reversal of MgZnO polarization. The magnitude of the reversed polarization was estimated to be a reasonable value of 3.0 (8.25) $\mu$ C/cm$^2$ at 300 K (2 K). These findings demonstrated the utilities of CoPt/MgZnO interface as a potential candidate for ferroelectric memristors and can be extended to probe the resistive switching of other hexagonal ferroelectric materials.

Materials Science
Defect-mediated Polarization Switching in Ferroelectric Films for Low-Power-consuming and Ultra-High-density Memories

Yingxin Chen,Xin Chen,Hongwei Lu,Lei Zhang,Yong Yang,Qun-Dong Shen

DOI: https://doi.org/10.1016/j.polymer.2018.04.029

IF: 4.6

2018-01-01

Polymer

Abstract:Ferroelectric poly(vinylidene fluoride) (PVDF) based polymers are attracting tremendous interest because of their potential applications in flexible non-volatile memories. Current research suggests that the existence of a large hysteresis loop results in high-voltage operation and low writing/erasing speed, which is originated from uniform chain packing and coherent ferroelectric sequences in the crystalline regions. Here, we demonstrate the novel approach to understand the defect-mediated switching mechanisms in ferroelectric polymers by PFM-probe based technology. The single-point and linear polarization reversal is well controlled by defect-mediated ferroelectric phases that determine activation energy, switching rate, and the thermal stability. By the regulation of VDF/TrFE ratio and varying processing conditions, the coherent ferroelectric phase with all-trans sequence in the P(VDF-TrFE) has been disrupted by defects. Specially, the crystallites formed at high temperature in the copolymer P(VDF-TrFE) 50:50 mol% exhibit less ordered ferroelectric crystalline sequences, thus attaining the excellent features of the low operation voltage of about 4 V with a switching time of 100 ms, ultra-high memory density of 43.9 Gbit.in(-2 )(by a 7 V, 1 ms pulse) and a high usage temperature of 60 degrees C. Compared with P(VDF-TrFE) 68:32 mol%, normal ferroelectric, it saves approximate 50% ratio of energy cost, and realizes four times higher resolution. Understanding and controlling defect functionality in ferroelectric materials is as critical for realizing their reliable applications in ferroelectric memories. (C) 2018 Elsevier Ltd. All rights reserved.
Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching

Junxiang Yao,Mao Ye,Yuanwei Sun,Ye Yuan,Hua Fan,Yuan Zhang,Chao Chen,Cong Liu,Ke Qu,Gaokuo Zhong,Tingting Jia,Zhen Fan,Shanming Ke,Yue Zhao,Chungang Duan,Peng Gao,Jiangyu Li

DOI: https://doi.org/10.1016/j.actamat.2020.02.001

IF: 9.4

2020-01-01

Acta Materialia

Abstract:Ferroelectric heterostructures with bi-stable state of polarization are appealing for data storage as well as tunable functionalities such as memristor behavior. While an increasing number of experimental and theoretical studies suggest that polarization persists in ultrathin epitaxial heterostructures approaching just a couple of unit cells, the switching of such polar order is much less well understood, and whether polarization can be reversed in ultrathin ferroelectric heterostructures remains to be answered. Here we fabricate high-quality 7-unit cell thick BaTiO3 (BTO) films on Nb-doped single crystalline SrTiO3 (NSTO) substrate, and demonstrate their apparent yet unambiguously false polarization reversal due to charge injection using comprehensive piezoresponse force microscopy (PFM) studies. The presence of weak polar order consistent with linear piezoelectricity is confirmed at the atomic scale by high resolution integrated differential phase contrast (IDPC) of transmission electron microscopy (TEM) as well as macroscopic second harmonic generation (SHG), while the lack of polarization reversal under the voltage applied is supported by density functional theory calculation showing the persistence of dead layer on the surface. Nevertheless, poling-induced electric conduction differing by two orders of magnitude is observed, demonstrating resistive switching in ferroelectric heterostructure in the absence of polarization reversal, even with weak polar order. Our finding has technological implications on emerging memristor applications with potentially more accessible states than bi-stable polarization modulated mechanism, and raises technical challenges to unambiguously demonstrate polarization switching in ultrathin films at their critical size limit.
Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Yi Wan,Mingyan Liu,Fang Li,Ziyang Qu,Yibin Zhao,Yuxuan Peng,Pan Li,Zuxin Chen,Shanbao Chen,Jinbo Yang,Chengxi Huang,Erjun Kan

DOI: https://doi.org/10.1002/aelm.202300881

IF: 6.2

2024-04-06

Advanced Electronic Materials

Abstract:A WS2/CuInP2S6 heterostructure is fabricated in such a way that screening charges of opposite signs are supplied to WS2 monolayers by the residual polarization of ferroelectric CuInP2S6 regions with antiparallel orientations. This significantly modifies the proportion of negatively charged trions to neutral excitons in the direct‐gap semiconductor's recombination luminescence, providing a feasible method for non‐volatile, controlled modulation in 2D systems. The integration of 2D ferroelectric materials with 2D photoelectric materials presents a promising avenue for addressing issues related to controlled doping and device integration in layered semiconductors. The reversible and non‐volatile residual polarization inherent to ferroelectrics can provide stable n‐ or p‐type doping for 2D semiconductors. Despite advances in doping strategies for 2D materials, existing techniques, and post‐doping characterization methodologies exhibit limitations, including the challenge of achieving high‐resolution graphical depictions of doped structures. Here, a WS2/CuInP2S6 heterostructure is demonstarted whereby the residual polarization of ferroelectric CuInP2S6 regions with anti‐parallel directions supplies screening charges of opposite signs to WS2 monolayers. This notably alters the ratio of neutral excitons and negatively charged trions within the recombination luminescence of the direct‐gap semiconductor, thereby offering a viable approach for controllable, non‐volatile modulation in 2D systems. Beyond proposing a feasible strategy for patterned doping and effective regulation in 2D semiconductors through interface engineering, this work enhances the understanding of the interplay between ferroelectrics and semiconductors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions

Kai Zhang,Haozhe Li,Haoran Mu,Yun Li,Pu Wang,Yu Wang,Tongsheng Chen,Jian Yuan,Weiqiang Chen,Wenzhi Yu,Guangyu Zhang,Qiaoliang Bao,Shenghuang Lin

DOI: https://doi.org/10.1002/adma.202405233

2024-08-01

Abstract:Light-induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in photodetectors with multilevel current and reconfigurable capabilities. However, translating this potential into practical applications for high-density optoelectronic information storage remains challenging. In this work, an α-In2Se3/Te heterojunction design that demonstrates spatially resolved, multilevel, nonvolatile photoresponsivity is presented. Using photocurrent mapping, the spatially localized light-induced poling state (LIPS) is visualized in the junction region. This localized ferroelectric polarization induced by illumination enables the heterojunction to exhibit enhanced photoresponsivity. Unlike previous reports that observe multilevel polarization enhancement in electrical resistance, the device shows nonvolatile photoresponsivity enhancement under illumination. After polarization saturation, the photocurrent increases up to 1000 times, from 10-12 to 10-9 A under the irradiation of a 520 nm laser with a power of 1.69 nW, compared to the initial state in a self-driven mode. The photodetector exhibits high detectivity of 4.6×1010 Jones, with a rise time of 27 µs and a fall time of 28 µs. Furthermore, the device's localized poling characteristics and multilevel photoresponse enable spatially multiplexed optical information storage. These results advance the understanding of LIPS in 2D ferroelectric materials, paving the way for optoelectronic information storage technologies.

Attention changes local brain activity.

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric Heterojunctions

Hysteresis Related to Ion Migration Rather Than Ferroelectric Polarization in MAPbI3

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

Multilevel hysteresis loop engineered with ferroelectric nano-metamaterials

Electrical Switching Behavior from All-Polymer-Based System of Semiconductor/Ferroelectrics/Semiconductor

Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene Fluoride)-Based Flexible Nanocomposites

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Ultralow-pressure-driven Polarization Switching in Ferroelectric Membranes

Electro and Photon Double-Driven Non-Volatile and Non-Destructive Readout Memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 Heterostructures

Ultrafast Photocurrent Hysteresis in Photoferroelectric α-In2Se3

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

[Problem of acquired toxoplasmosis during malignant diseases].

Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns

Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories

Ferroelectricity driven-resistive switching and Schottky barrier modulation at CoPt/MgZnO interface for non-volatile memories

Defect-mediated Polarization Switching in Ferroelectric Films for Low-Power-consuming and Ultra-High-density Memories

Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions