Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

Broadband MoS 2 Square Nanotube-Based Photodetectors

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm

Visible To Near-Infrared Photodetectors Based On Mos2 Vertical Schottky Junctions

Amorphous MoS2 Photodetector with Ultra-Broadband Response

UV to NIR Broadband Flexible Photodetector Based on Solution‐Processed MoS2/PDPP3T Inorganic–Organic Hybrid Heterostructures

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Broadband photodetection using one-step CVD-fabricated MoS2/MoO2 microflower/microfiber heterostructures

High‐Performance Photodetectors Based on Suspended Ultralong CNTs‐MoS2 Heterojunction Networks

High-Sensitivity 2D MoS2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

A New Strategy to Improve the Performance of MoS2-based 2D Photodetector by Synergism of Colloidal CuInS2 Quantum Dots and Surface Plasma Resonance of Noble Metal Nanoparticles

Large-Scale Multilayer MoS2 Nanosheets Grown by Atomic Layer Deposition for Sensitive Photodetectors

Hybrid structure of PbS QDs and vertically-few-layer MoS 2 nanosheets array for broadband photodetector

Broadband and High‐Performance Photodetector Fabricated Using Large Area and Transfer‐Free 2D–2D PtS2/MoS2 Heterostructure

High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor

Enhanced Optoelectronic Characteristics of MoS2-based Photodetectors Through Hybridization with CdS0.42Se0.58 Nanobelt

An Ultrasensitive and Broad‐Spectrum MoS2 Photodetector with Extrinsic Response Using Surrounding Homojunction

Self-powered broadband photodetection enabled by facile CVD-grown MoS2/GaN heterostructures

Room-Temperature Ultrabroadband Photodetection with MoS2 by Electronic-Structure Engineering Strategy

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics