Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque

High efficient field-free magnetization switching via exchange bias effect induced by antiferromagnetic insulator interface

Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure

Harnessing Interlayer Magnetic Coupling for Efficient, Field-Free Current-Induced Magnetization Switching in a Magnetic Insulator

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Electric-field switching of two-dimensional van der Waals magnets

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Strain-mediated magnetoelectric effect for the electric-field control of magnetic states in nanomagnets

Electric Field Induced Reversible 180° Magnetization Switching Through Tuning of Interfacial Exchange Bias along Magnetic Easy-Axis in Multiferroic Laminates

Electric-field-controlled magnetization switching in multiferroic heterostructures containing interactive magnetic nanoislands

Voltage-Driven 180° Magnetization Switching in Magnetoelectric Heterostructures

Electric-Field-Control of Non-Volatile Magnetization Switching in Multiferroic CoFeB/(011)-PMN-PT Heterostructures

Electrical control of ON–OFF magnetism and exchange bias via reversible ionic motion

Ultra-low-energy Electric field-induced Magnetization Switching in Multiferroic Heterostructures

Nonvolatile Electric Field Control of Magnetism in Bilayer CrI3 on Monolayer In2Se3

Electric-field-induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure.

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Probing electric field control of magnetism using ferromagnetic resonance

Field-free control and switching of perpendicular magnetization by voltage induced manipulation of RKKY interaction

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium