Abstract:Na 2 KSb photocathodes have attracted wide applications in vacuum optoelectronic devices, such as photomultiplier tubes, image intensifiers, and streak image tubes for high-speed detection and imaging in extremely weak light environments, due to their advantages of high temperature resistance, small dark current, low vacuum requirement, low fabrication cost and high fabrication flexibility. In addition, this type of photocathode has important application prospect in high brightness accelerator photoinjectors. To guide the fabrication of high-sensitivity Na 2 KSb photocathodes, Na 2 KSb surfaces with different surface orientations and atom terminations were investigated by the first-principles calculation method based on the density functional theory to obtain the most stable and most favorable surface for electron emission. From the perspectives of surface energy, adsorption energy, and work function before and after Cs adsorption, it is revealed that the Na 2 KSb (111)K surface exhibits superior surface stability and electron emission ability. Furthermore, the electronic structure and optical properties of Cs adsorption and Cs/O co-adsorption on the Na 2 KSb (111)K surface under different Cs coverages were analyzed, and the mechanism of Cs/O deposition on Na 2 KSb surface was studied. The adsorption energy of Cs in the Cs/O adsorption model is much larger than that in the single Cs adsorption model, indicating that the adsorption of O atoms on the Na 2 KSb surface can make the adsorption of Cs atoms on the surface stronger and increase the adhesion of Cs atoms on the surface. After adsorption of Cs on the Na 2 KSb (111)K surface, the surface work function only decreases by 0.02 eV, while the maximum work function decrease for the Cs/O adsorbed surface is 0.16 eV, with the Cs coverage of 2/4 ML and the O coverage of 1/4 ML. The adsorption of Cs/O atoms on the surface facilitates the charge transfer above the surface and results in charge accumulation, which can form the effective surface dipole moment. The magnitude of the surface dipole moment is directly related to the change of work function. Furthermore, through the analysis of the electronic band structure and density of states, it is found that the adsorbed Cs atoms have additional contribution to the band structure near the conduction band minimum. After the introduction of O atoms, the valence band moves up, also the bottom of the conduction band and the top of the valence band become flat. The Cs/O deposition is beneficial to increase the absorption of near-infrared light on the Na 2 KSb surface, but it will cause a decrease in absorption of ultraviolet and visible light and a decrease in refractive index. This work has certain reference significance for understanding the optimal emission surface of Na 2 KSb photocathode and the mechanism of surface Cs/O deposition.

First-principles study on electronic and optical properties of O-adsorbed Al0.5Ga0.5N photocathode surface

Cs and O co-adsorption on p-type Al0.5Ga0.5N (0001) UV photocathode surface

Electrical and Optical Properties of G-Gan/al0.5ga0.5n 2D/3D Heterojunction under Surface Oxidation Via First-Principles

Electrical and optical properties of g-GaN/Al 0.5 Ga 0.5 N 2D/3D heterojunction under surface oxidation via first-principles

First Principles Calculations of the Electronic Structure and Optical Properties of Pure and (nb, N) Co-Doped Anatase

Electronic structure of Cs adsorption on Al0.5Ga0.5N(0001) surface

First-principles study of Cs/O deposited Na 2 KSb photocathode surface

Electronic properties of graded Ga 1‐x Al x N superlattice nanowires photocathode: First‐principles

Comparison of activation behavior of Cs-O and Cs-NF3-adsorbed GaAs(1 0 0)-β2(2 × 4) surface: From DFT simulation to experiment

Structural and electronic properties of Cs‐adsorbed GaN monolayer and bilayer based on first principles

Understanding the surface adsorption and oxidation of cubic Cr0.5Al0.5N by first-principles calculations

Theoretical exploration of quantum efficiency of Al x Ga 1 − x N monolayer photocathode with varying Al contents and ultra‐thin emission layer

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

The adsorption of oxygen on alkali metal covered GaAs (1 1 1) surfaces

Insights into performance enhancement mechanism of GaAs(100) photocathode by Cs/Li/O and Cs/Li/NF3 co-deposition

Adsorption of Al on Gan(110) Surface

Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Adsorption behavior of oxygen on Ti 0.5 Al 0.5 N (001) surface with X-doped (X = La, Ce, Y, Hf, Zr, Ta, Cr, Si): A first-principles study

Comprehensive study on the optical properties of graded Al component AlxGA1-xn nanostructures for UV photocathode

First Principles Investigation of Interaction of Oxygen with Low Index Surfaces of Γ-Tial