Structural and electronic properties of Cs‐adsorbed GaN monolayer and bilayer based on first principles

Lei Liu,Jian Tian,Feifei Lu

DOI: https://doi.org/10.1002/er.6464

IF: 4.6

2021-01-31

International Journal of Energy Research

Abstract:<section class="article-section__content"><p>A negative electron affinity photocathode can be obtained by adsorbing Cs on the emission layer surface of photocathode, which greatly improves the number of electrons escaped and the quantum efficiency. Based on first principles, this paper studies the structural and electronic properties of Cs‐adsorbed GaN monolayer and bilayer. The results reveal that the Cs‐adsorbed GaN monolayer is the most stable when Cs atom is adsorbed at T_Ga site. There is a significant charge transfer between Cs atom and GaN monolayer, and the difference in electronegativity makes electrons of Cs atom transfer to GaN monolayer system. Cs adsorption can reduce band gap, work function, and electron affinity, which is conducive to the escape of electrons and improvement of quantum efficiency. Cs adsorption is helpful for tuning optical properties of GaN monolayer. For the GaN bilayer, greater stability and lower work function make the Cs adsorbed above the top layer of GaN bilayer be more beneficial to the improvement of photoelectric performance. </p></section><section class="article-section__content"><h3 class="article-section__sub-title section1"> Novelty Statement</h3><p>Based on first principles, this paper studies the structure and electric properties of Cs‐adsorbed GaN monolayer and bilayer. Cs adsorption can reduce band gap, work function, and electron affinity, which is conducive to the escape of electrons and improvement of quantum efficiency. And for the GaN bilayer, greater stability and lower work function make the Cs adsorbed above the top layer of GaN bilayer be more beneficial to the improvement of photoelectric performance.</p></section>

energy & fuels,nuclear science & technology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the changes in the structure and electronic properties of cesium (Cs) adsorbed on single - layer and double - layer gallium nitride (GaN) structures, in order to improve the performance of photocathode materials. Specifically, the paper focuses on the following aspects:

1. **Structural stability**: Study the stability changes of single - layer and double - layer GaN structures when cesium atoms are adsorbed at different positions (such as T_N, T_Ga, H, B_Ga - N). Evaluate the relative stability of different adsorption positions by calculating the adsorption energy.

2. **Charge transfer**: Analyze the charge transfer between cesium atoms and single - layer and double - layer GaN, and explore the influence of charge transfer on the electronic properties of materials.

3. **Band structure and density of states (DOS)**: Through first - principles calculations, study the changes in the band structure and density of states of single - layer and double - layer GaN before and after cesium adsorption, especially the position changes of the conduction band minimum (CBM) and valence band maximum (VBM).

4. **Optical properties**: Examine the influence of cesium adsorption on the reflectivity and absorption coefficient of single - layer and double - layer GaN, and evaluate the changes in their optical performance in the deep ultraviolet range.

5. **Work function and electron affinity**: Calculate the work function and electron affinity of single - layer and double - layer GaN before and after cesium adsorption, and evaluate the influence of these parameter changes on electron escape and quantum efficiency.

### Main findings

- **Single - layer GaN**:
- When cesium is adsorbed at the T_Ga site, the single - layer GaN structure is the most stable.
- Cesium adsorption leads to a decrease in the band gap, work function and electron affinity of single - layer GaN, which is beneficial to electron escape and the improvement of quantum efficiency.
- Cesium adsorption makes single - layer GaN exhibit metallic properties, and the optical properties at different adsorption positions are improved.

- **Double - layer GaN**:
- When cesium is adsorbed on the top - layer Ga atom (site A), the double - layer GaN structure is more stable and has a lower work function.
- Cesium adsorption makes the double - layer GaN change from an indirect band gap to a direct band gap, further improving the photoelectric performance.
- When cesium is adsorbed at site A, the optical performance and electron escape ability of double - layer GaN are better than those at other adsorption positions.

### Conclusion

Based on first - principles calculations, the influence of cesium adsorption on the structure and electronic properties of single - layer and double - layer GaN has been studied. The results show that cesium adsorption can significantly improve the photoelectric performance of GaN materials, especially has potential in improving quantum efficiency and optimizing optical properties. These studies provide a theoretical basis for the development of high - performance GaN - based photocathode materials.