Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation

AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Growth model of van der Waals epitaxy of films: A case of AlN films on multilayer graphene/SiC.

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene As a Buffer Layer

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

First-principle Calculations of Adsorption of Ga (al, N) Adatoms on the Graphene for the Van-Der-waals Epitaxy