Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

Stm Observation of Pit Formation and Evolution During the Epitaxial Growth of Si on Si(001) Surface

Interplay Between Elastic Interactions and Kinetic Processes in Stepped Si (001) Homoepitaxy

Pit nucleation in the presence of 3D islands during heteroepitaxial growth

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Pits and Adatoms at the Interface of 1-Ml C-84/Ag (111)

Quantitative Model of Heterogeneous Nucleation and Growth of Sige Quantum Dot Molecules

Shape-controlled fabrication of micro/nanoscale triangle, square, wire-like, and hexagon pits on silicon substrates induced by anisotropic diffusion and silicide sublimation.

Heterogeneous nucleation and adatom detachment at 1-D growth of Indium on Si(100)-2x1

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Investigation on the Mechanism of Instability for Step Morphology During 3C-Sic (111) Vicinal Surface Epitaxial Growth

Effect of Deposition and Treatment Conditions on Growth of Nanometer Ptsi Heterostructure

Anomalous intralayer growth of epitaxial Si on Ag(111)

Thermally Induced Surface Faceting on Heteroepitaxial Layers

Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

H-Induced Platelet And Crack Formation In Hydrogenated Epitaxial Si/Si0.98b0.02/Si Structures

Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots