Abstract:Quantum dots (QDS) are widely used as photoactive materials for various optoelectronic applications, such as light-emitting diodes, photodetectors, lasers, and solar cells, because of their unique and outstanding physical properties for fabricating devices via solution-processing techniques and for varying the sizes of QD to modulate the band gap. In this study, we constructed a numerical model of a vertical photodetector using lead sulfide (PbS) quantum dot layer undergoing ligand exchange treatment with tetrabutylammonium iodide (TBAI) as the light absorption layer to obtain an optimized high-performance photodetector using 1D-Solar Cell Capacitance Simulator (SCAPS) software. For the hole transport layer (HTL) and electron transport layer (ETL), a PbS quantum dot layer that employs an ethanedithiol (EDT) ligand exchange scheme and a zinc oxide (ZnO) layer were utilized, respectively, with gold (Au) and indium tin oxide (ITO) as the bottom and upper electrodes, respectively. After optimizing the thickness and doping concentration of the absorption layer, we obtained a maximum responsivity of 0.4675 A/W and detectivity of 2.44×10 13 Jones at a reverse bias of 0.5 volts after optimizing of thickness and doping concentration of absorption layer showing an improvement of 19% and 87.7% respectively compared to the initial structure whose parameters originated from studies of PbS quantum dot solar cells with the same structure and materials, although optimization of other transport layers do not provide as great performance enhancement as absorption layer. This study demonstrates that the structural parameters of solar cells are not always applicable to photodetectors, and that photodetectors have great potential for numerical optimization.

Size tunable and controllable synthesis of PbS quantum dots for broadband photoelectric response

Size-tunable and monodisperse lead sulfide quantum dots for broadband photodetectors

Size-controllable fabrication of PbS quantum dots for NIR–SWIR photodetectors with extended wavelengths

Ternary Pb1-xCdxS Quantum Dot-Based UV-vis-NIR Photoelectrochemical Photodetection with Superior Photoresponsivity and Detectivity

Spray-deposited PbS colloidal quantum dot solid for near-infrared photodetectors

Broadband photodetectors with enhanced performance in UV–Vis–NIR band based on PbS quantum dots /ZnO film heterostructure

Design and optimization of the performance of PbS quantum dot based vertical photodetector

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Breaking the Size Limitation of Directly-Synthesized PbS Quantum Dot Inks Toward Efficient Short-wavelength Infrared Optoelectronic Applications.

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

Optimizing the Infrared Photoelectric Detection Performance of Pbs Quantum Dots through Solid-State Ligand Exchange

A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity

High-Performance Photodetector with a-IGZO/PbS Quantum Dots Heterojunction

Hybrid structure of PbS QDs and vertically-few-layer MoS 2 nanosheets array for broadband photodetector

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

Nano-Oxide-Assisted Si/PbS CQD Heterojunction Photodetectors for Broadband Sensing

Mid-infrared response of PbS colloidal quantum dot solids

Ambient-Stable and High On/Off Ratio Near-Infrared Photodetector Based on Perovskite-Treated PbS Colloidal Quantum Dots

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

High-Radiance Shortwave Infrared Light-Emitting Diodes Based on Highly Stable PbS Colloidal Quantum Dots

Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots