Abstract:InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and have long been of interest for incorporation into quantum optoelectronic devices ranging from single photon sources to multi-bit quantum computers. The properties of single QDs, or carriers confined within those QDs, can be tuned by external electric fields, which provides an important tool for the development of scalable and tunable devices. Deterministic charging of a QD with a single electron or hole is an important tool for quantum devices and is well-established under the application of growth-direction electric fields in a diode structure. Here, we report a new charging mechanism for a single QD in a 3-electrode device that does not contain a vertical diode and can be used to control electric field profiles in two dimensions. We fabricate the device with E-beam lithography and characterize photoluminescence from single QDs under different bias configurations. Using a combination of experimental data and COMSOL band structure calculations, we explain how the charging originates in the electrical-injection of holes induced by lateral electric fields. We discuss the applications for this device and the potential for full 2-D electric field control of a single QD and QDM.

Charge-Tunable Indium Gallium Nitride Quantum Dots

Physics of Lateral Triple Quantum-Dot Molecules with Controlled Electron Numbers

Optical spectroscopy of single quantum dots at tunable positive, neutral and negative charge states

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot

Single-electron charge sensing in self-assembled quantum dots

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Narrow optical linewidths and spin pumping on charge-tunable, close-to-surface self-assembled quantum dots in an ultra-thin diode

Highly Tunable Hybrid Quantum Dots with Charge Detection

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

A two-dimensional array of single-hole quantum dots

A Highly Tunable Lateral Quantum Dot Realized in Ingaas/Inp by an Etching Technique

Charging of a Single InAs QD with Electrically-Injected Holes using a Lateral Electric Field

Charge State Control in Single Inas/Gaas Quantum Dots by External Electric and Magnetic Fields

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

Elementary excitations in charge-tunable InGaAs quantum dots studied by resonant Raman and resonant photoluminescence spectroscopy

Electromagnetically Induced Transparency of Charge Pumping in a Triple-Quantum-dots with Λ-type Level Structure

A Charge and Spin Readout Scheme For Single Self-Assembled Quantum Dots

Charge Sensing in Intrinsic Silicon Quantum Dots