Interface Engineering of Rare-Earth Oxide-GaN Heterojunction for Improving Vacuum-Ultraviolet Photodetection

Dan Zhang,Jiarong Liang,Han Cai,Weisen Li,Zhao Wang,Qijun Sun,Xingui Tang,Wei Zheng

DOI: https://doi.org/10.1109/ted.2024.3499945

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:Lutetium oxide (Lu $_{\text{2}}$ O $_{\text{3}}$ ), an ultrawide bandgap (UWB) (5.5–6.2 eV) rare-Earth oxide, has been proposed as a potential material for constructing vacuum-ultraviolet (VUV) photodetectors. In this work, an ultrathin (4 nm) aluminum oxide (Al $_{\text{2}}$ O $_{\text{3}}$ ) layer is deposited at the interface of Lu $_{\text{2}}$ O $_{\text{3}}$ /GaN heterojunction to fabricate a Lu $_{\text{2}}$ O $_{\text{3}}$ VUV photovoltaic detector with high performance. At 0 V bias and under VUV illumination, the Lu $_{\text{2}}$ O $_{\text{3}}$ /Al $_{\text{2}}$ O $_{\text{3}}$ /GaN photodetector presents a photoresponsivity of 17.2 mA/W (at 192 nm), a decay time of 54.9 ms, and a detectivity of 1.2 $\times$ 10 $^{\text{12}}$ Jones. The excellent performance of the device comes from the ultrathin Al $_{\text{2}}$ O $_{\text{3}}$ layer deposited at the heterojunction interface, which not only acts as a buffer layer but also as a hole-blocking layer, improving the quality of the photosensitive layer and the separation efficiency of photo-generated carriers. Furthermore, with an increase in the thickness of the Al $_{\text{2}}$ O $_{\text{3}}$ layer ( $>$ 4 nm), a deterioration of optoelectronic properties of the Lu $_{\text{2}}$ O $_{\text{3}}$ /Al $_{\text{2}}$ O $_{\text{3}}$ /GaN device can be observed, which is attributed to an increase in the transport distance of the photo-generated carrier and a reduction in the probability of electron tunneling. This work can provide a reference for the preparation of high-performance Lu $_{\text{2}}$ O $_{\text{3}}$ -based VUV photovoltaic detectors in the future.