Abstract:Great progress has been achieved in the research field of topological states of matter during the past decade. Recently, a quasi-1-dimensional bismuth bromide, Bi4Br4, has been predicted to be a rotational symmetry-protected topological crystalline insulator; it would also exhibit more exotic topological properties under pressure. Here, we report a thorough study of phase transitions and superconductivity in a quasihydrostatically pressurized alpha-Bi4Br4 crystal by performing detailed measurements of electrical resistance, alternating current magnetic susceptibility, and in situ high-pressure single-crystal X-ray diffraction together with first principles calculations. We find a pressure-induced insulator-metal transition between similar to 3.0 and 3.8 GPa where valence and conduction bands cross the Fermi level to form a set of small pockets of holes and electrons. With further increase of pressure, 2 superconductive transitions emerge. One shows a sharp resistance drop to 0 near 6.8 K at 3.8 GPa; the transition temperature gradually lowers with increasing pressure and completely vanishes above 12.0 GPa. Another transition sets in around 9.0 K at 5.5 GPa and persists up to the highest pressure of 45.0 GPa studied in this work. Intriguingly, we find that the first superconducting phase might coexist with a nontrivial rotational symmetry-protected topology in the pressure range of similar to 3.8 to 4.3 GPa; the second one is associated with a structural phase transition from monoclinic C2/m to triclinic P-1 symmetry.

Shear-resistant Topology in Quasi One-Dimensional Van Der Waals Material Bi_4Br_4

Shear-resistant topology in quasi one-dimensional van der Waals material Bi$_4$Br$_4$

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Quasi-One-Dimensional Higher-Order Topological Insulators

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi 4 Br 4

Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)

Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4

Topological Edge States and Electronic Structures of A 2d Topological Insulator: Single-Bilayer Bi (111)

Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Structural investigation of the quasi-one-dimensional topological insulator Bi$_4$I$_4$

Lattice and magnetic structure in the van der Waals antiferromagnet VBr3

2D and 3D topological phases in BiTe$X$ compounds

One-dimensional van der Waals BiSBr: an anisotropic thermoelectric mineral

Abstract Submitted for the MAR16 Meeting of The American Physical Society One-dimensional edge states in Bi(111) bilayer grown on Sb2Te3

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

Pressure-induced Phase Transitions and Superconductivity in a Quasi-1-dimensional Topological Crystalline Insulator Alpha-Bi4br4

MnBi2Te4 – a Good Platform for Topological Quantum Physics Study