Abstract:Bi$_4$Br$_4$ is a prototypical quasi one-dimensional (1D) material in which covalently bonded bismuth bromide chains are arranged in parallel, side-by-side and layer-by-layer, with van der Waals (vdW) gaps in between. So far, two different structures have been reported for this compound, $\alpha$-Bi$_4$Br$_4$ and $\beta$-Bi$_4$Br$_4$ , in both of which neighboring chains are shifted by $\mathbf{b}/2$, i.e., half a unit cell vector in the plane, but which differ in their vertical stacking. While the different layer arrangements are known to result in distinct electronic properties, the effect of possible in-plane shifts between the atomic chains remains an open question. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we report a new Bi$_4$Br$_4$(001) structure, with a shift of $\mathbf{b}/3$ between neighboring chains in the plane and AB layer stacking. We determine shear strain to be the origin of this new structure, which can readily result in shifts of neighboring atomic chains because of the weak inter-chain bonding. For the observed $b/3$ structure, the (residual) atomic chain shift corresponds to an in-plane shear strain of $\gamma\approx7.5\%$. STS reveals a bulk insulating gap and metallic edge states at surface steps, indicating that the new structure is also a higher-order topological insulator, just like $\alpha$-Bi$_4$Br$_4$, in agreement with density functional theory (DFT) calculations.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the influence of in - plane displacements between atomic chains on the material structure and topological properties in the quasi - one - dimensional van der Waals material Bi4Br4. Specifically, the authors studied a new Bi4Br4(001) surface structure through scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), in which there is a displacement of $ \frac{b}{3} $ between adjacent chains and the inter - layer stacking is of AB type. This new structure is caused by shear strain, resulting in displacements between adjacent atomic chains. ### Main problem summary: 1. **Explore new structures**: Investigate whether there are new structures caused by shear strain in Bi4Br4. 2. **Understand the influence of displacement**: Analyze the influence of in - plane displacements between chains on the electronic structure and topological properties. 3. **Verify the characteristics of topological insulators**: Confirm whether the new structure still maintains the characteristics of high - order topological insulators (HOTI), including the existence of bulk band gaps and edge states. ### Specific content: - **Discovery of new structures**: It was observed by STM that there is a displacement of $ \frac{b}{3} $ between adjacent chains instead of the known $ \frac{b}{2} $ displacement. - **Effect of shear strain**: Determine that shear strain is the origin of the new structure, and the shear strain is approximately 7.5%. - **Electronic properties**: STS results show that the new structure has a bulk insulating band gap and metallic edge states, indicating that it is a quantum spin Hall (QSH) insulator. - **DFT calculation**: Further verify the topological properties of the new structure through density functional theory (DFT) calculations, and the calculation results are consistent with the experimental data. ### Research significance: This research not only reveals a new structural phase in Bi4Br4, but also deeply explores the influence of shear strain on the topological properties of quasi - one - dimensional van der Waals materials, providing an important basis for further understanding and designing new topological materials.

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